AAAAAA

   
Results: 1-9 |
Results: 9
The use of convergent beam electron diffraction for stress measurements inshallow trench isolation structures
Authors: Stuer, C Van Landuyt, J Bender, H Rooyackers, R Badenes, G
Citation: C. Stuer et al., The use of convergent beam electron diffraction for stress measurements inshallow trench isolation structures, MAT SC S PR, 4(1-3), 2001, pp. 117-119
Lifetime study in advanced isolation techniques
Authors: Poyai, A Simoen, E Claeys, C Rooyackers, R Badenes, G
Citation: A. Poyai et al., Lifetime study in advanced isolation techniques, MAT SC S PR, 4(1-3), 2001, pp. 137-139
Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS
Authors: Grau, L Augendre, E Simoen, E Rooyackers, R Claeys, C Badenes, G Romano-Rodriguez, A
Citation: L. Grau et al., Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS, J MAT S-M E, 12(4-6), 2001, pp. 211-214
Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy
Authors: Dombrowski, KF Dietrich, B De Wolf, I Rooyackers, R Badenes, G
Citation: Kf. Dombrowski et al., Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy, MICROEL REL, 41(4), 2001, pp. 511-515
Diode analysis of high-energy boron implantation-induced P-well defects
Authors: Poyai, A Simoen, E Claeys, C Rooyackers, R Badenes, G
Citation: A. Poyai et al., Diode analysis of high-energy boron implantation-induced P-well defects, J ELCHEM SO, 148(9), 2001, pp. G507-G512
Investigation by convergent beam electron diffraction of the stress aroundshallow trench isolation structures
Authors: Stuer, C Van Landuyt, J Bender, H De Wolf, I Rooyackers, R Badenes, G
Citation: C. Stuer et al., Investigation by convergent beam electron diffraction of the stress aroundshallow trench isolation structures, J ELCHEM SO, 148(11), 2001, pp. G597-G601
Integration challenges in sub-0.25 mu m CMOS-based technologies
Authors: Badenes, G Deferm, L
Citation: G. Badenes et L. Deferm, Integration challenges in sub-0.25 mu m CMOS-based technologies, MICROELEC J, 31(11-12), 2000, pp. 861-871
Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity
Authors: Augendre, E Rooyackers, R Caymax, M Vandamme, EP De Keersgieter, A Perello, C Van Dievel, M Pochet, S Badenes, G
Citation: E. Augendre et al., Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity, IEEE DEVICE, 47(7), 2000, pp. 1484-1491
A new dummy-free shallow trench isolation concept for mixed-signal applications
Authors: Badenes, G Rooyackers, R Augendre, E Vandamme, E Perello, C Heylen, N Grillaert, J Deferm, L
Citation: G. Badenes et al., A new dummy-free shallow trench isolation concept for mixed-signal applications, J ELCHEM SO, 147(10), 2000, pp. 3827-3832
Risultati: 1-9 |