Authors:
Wohlfart, A
Devi, A
Hipler, F
Becker, HW
Fischer, RA
Citation: A. Wohlfart et al., Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor, J PHYS IV, 11(PR3), 2001, pp. 683-687
Authors:
Livingston, RA
Schweitzer, JS
Rolfs, C
Becker, HW
Kubsky, S
Citation: Ra. Livingston et al., Characterization of the induction period in tricalcium silicate hydration by nuclear resonance reaction analysis, J MATER RES, 16(3), 2001, pp. 687-693
Authors:
Harissopulos, S
Chronidou, C
Spyrou, K
Paradellis, T
Rolfs, C
Schulte, WH
Becker, HW
Citation: S. Harissopulos et al., The Al-27(p, gamma)Si-28 reaction: direct capture cross-section and resonance strengths at E-p=0.2-1.12 MeV, EUR PHY J A, 9(4), 2000, pp. 479-489
Authors:
Devi, A
Rogge, N
Wohlfart, A
Hipler, F
Becker, HW
Fischer, RA
Citation: A. Devi et al., A study of bisazido(dimethylaminopropyl)gallium as a precursor for the OMVPE of gallium nitride thin films in a cold-wall reactor system under reduced pressure, CHEM VAPOR, 6(5), 2000, pp. 245-252
Authors:
Soelkner, G
Voss, P
Kaindl, W
Wachutka, G
Maier, KH
Becker, HW
Citation: G. Soelkner et al., Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation, IEEE NUCL S, 47(6), 2000, pp. 2365-2372
Authors:
Klockenkamper, R
von Bohlen, A
Becker, HW
Palmetshofer, L
Citation: R. Klockenkamper et al., Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry, SURF INT AN, 27(11), 1999, pp. 1003-1008