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Results:
1-14
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Results: 14
Authors:
Belogorokhov, AI
Belogorokhova, LI
Citation: Ai. Belogorokhov et Li. Belogorokhova, Optical phonons of circular wires in porous GaP, PHYS SOL ST, 43(9), 2001, pp. 1765-1769
Authors:
Belov, AG
Belogorokhov, AI
Lakeenkov, VM
Citation: Ag. Belov et al., Electrical properties of CdxHg1-xTe/CdZnTe heterostructures, SEMICONDUCT, 35(8), 2001, pp. 880-882
Authors:
Belogorokhov, AI
Lakeenkov, VM
Belogorokhova, LI
Citation: Ai. Belogorokhov et al., Optical properties of Cd1-xZnxTe (0 < x < 0.1) single crystals in the infrared spectral region, SEMICONDUCT, 35(7), 2001, pp. 773-776
Authors:
Stryahilev, D
Diehl, F
Schroder, B
Scheib, M
Belogorokhov, AI
Citation: D. Stryahilev et al., On the splitting of SiH absorption bands in infrared spectra of hydrogenated microcrystalline silicon, PHIL MAG B, 80(10), 2000, pp. 1799-1810
Authors:
Matsumoto, T
Belogorokhov, AI
Belogorokhova, LI
Masumoto, Y
Zhukov, EA
Citation: T. Matsumoto et al., The effect of deuterium on the optical properties of free-standing porous silicon layers, NANOTECHNOL, 11(4), 2000, pp. 340-347
Authors:
Belogorokhov, AI
Volkov, BA
Ivanchik, II
Khokhlov, DR
Citation: Ai. Belogorokhov et al., Model of DX-like impurity centers in PbTe(Ga), JETP LETTER, 72(3), 2000, pp. 123-125
Authors:
Belogorokhov, AI
Zakharov, IS
Knyazev, AF
Kochura, AV
Citation: Ai. Belogorokhov et al., Photoelectric properties of Se-doped Cd1.23Zn1.77As2 crystals, INORG MATER, 36(7), 2000, pp. 653-656
Authors:
Belogorokhov, AI
Zakharov, IS
Kochura, AV
Knjazev, AF
Citation: Ai. Belogorokhov et al., Far-infrared reflectivity of Cd3-xZnxAs2 monocrystals, APPL PHYS L, 77(14), 2000, pp. 2121-2123
Authors:
Romcevic, N
Romevic, M
Khokhlov, DR
Belogorokhov, AI
Ivanchik, II
Konig, W
Citation: N. Romcevic et al., Far-infrared study of impurity local modes in gallium-doped PbTe, INFR PHYS T, 40(6), 1999, pp. 453-462
Authors:
Belogorokhov, AI
Belov, AG
Lakeenkov, VM
Smirnova, NA
Belogorokhova, LI
Citation: Ai. Belogorokhov et al., Absorption of infrared radiation by free charge carriers in n-type Cd1-xZnxTe, SEMICONDUCT, 33(5), 1999, pp. 514-517
Authors:
Belogorokhov, AI
Belogorokhova, LI
Citation: Ai. Belogorokhov et Li. Belogorokhova, Optical properties of porous silicon layers processed with a HF : HCl : C2H5OH electrolyte, SEMICONDUCT, 33(2), 1999, pp. 169-174
Authors:
Vasilevskiy, MI
Belogorokhov, AI
Gomes, MJM
Citation: Mi. Vasilevskiy et al., The effects of short-range order and natural microinhomogeneities on the FIR optical properties of CdxHg1-xTe, J ELEC MAT, 28(6), 1999, pp. 654-661
Authors:
Belogorokhov, AI
Bublik, VT
Scherbachev, KD
Parkhomenko, YN
Makarov, VV
Danilin, AB
Citation: Ai. Belogorokhov et al., Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon, NUCL INST B, 147(1-4), 1999, pp. 320-326
Authors:
Belogorokhov, AI
Belogorokhova, LI
Gavrilov, S
Citation: Ai. Belogorokhov et al., Investigation of properties of porous silicon embedded with ZnSe and CdSe, J CRYST GR, 197(3), 1999, pp. 702-706
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