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Results: 26-34/34
Authors:
Whitman, LJ
Bennett, BR
Kneedler, EM
Jonker, BT
Shanabrook, BV
Citation: Lj. Whitman et al., The structure of Sb-terminated GaAs(001) surfaces, SURF SCI, 436(1-3), 1999, pp. L707-L714
Authors:
Hammar, PR
Bennett, BR
Yang, MJ
Johnson, M
Citation: Pr. Hammar et al., Observation of spin injection at a ferromagnet-semiconductor interface, PHYS REV L, 83(1), 1999, pp. 203-206
Authors:
Yang, MJ
Moore, WJ
Bennett, BR
Shanabrook, BV
Cross, JO
Bewley, WW
Felix, CL
Vurgaftman, I
Meyer, JR
Citation: Mj. Yang et al., Optimum growth parameters for type-II infrared lasers, J APPL PHYS, 86(4), 1999, pp. 1796-1799
Authors:
Yang, MJ
Moore, WJ
Yang, CH
Wilson, RA
Bennett, BR
Shanabrook, BV
Citation: Mj. Yang et al., Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry, J APPL PHYS, 85(9), 1999, pp. 6632-6635
Authors:
Bennett, BR
Shanabrook, BV
Twigg, ME
Citation: Br. Bennett et al., Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures, J APPL PHYS, 85(4), 1999, pp. 2157-2161
Authors:
Boos, JB
Yang, MJ
Bennett, BR
Park, D
Kruppa, W
Bass, R
Citation: Jb. Boos et al., Low-voltage, high-speed AlSb InAsSb HEMTs, ELECTR LETT, 35(10), 1999, pp. 847-848
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bennett, BR
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition, APPL PHYS L, 74(12), 1999, pp. 1704-1706
Authors:
Bewley, WW
Felix, CL
Aifer, EH
Vurgaftman, I
Olafsen, LJ
Meyer, JR
Lee, H
Martinelli, RU
Connolly, JC
Sugg, AR
Olsen, GH
Yang, MJ
Bennett, BR
Shanabrook, BV
Citation: Ww. Bewley et al., Above-room-temperature optically pumped midinfrared W lasers, APPL PHYS L, 73(26), 1998, pp. 3833-3835
Authors:
Bennett, BR
Citation: Br. Bennett, Strain relaxation in InAs/GaSb heterostructures, APPL PHYS L, 73(25), 1998, pp. 3736-3738