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Results: 1-12 |
Results: 12
Optical properties of nanodiamond layers
Authors: Aleksenskii, AE Osipov, VY Vul', AY Ber, BY Smirnov, AB Melekhin, VG Adriaenssens, GJ Iakoubovskii, K
Citation: Ae. Aleksenskii et al., Optical properties of nanodiamond layers, PHYS SOL ST, 43(1), 2001, pp. 145-150
Preparation and properties of isotopically pure polycrystalline silicon
Authors: Godisov, ON Kaliteevskii, AK Korolev, VI Ber, BY Davydov, VY Kaliteevskii, MA Kop'ev, PS
Citation: On. Godisov et al., Preparation and properties of isotopically pure polycrystalline silicon, SEMICONDUCT, 35(8), 2001, pp. 877-879
Ion profiling of GaAs heterostructures: experiment and computer modeling
Authors: Ber, BY Zhurkin, EE Kudryavtsev, YA Kulikov, DV Trushin, YV Kharlamov, VS
Citation: By. Ber et al., Ion profiling of GaAs heterostructures: experiment and computer modeling, IAN FIZ, 64(4), 2000, pp. 791-795
An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
Authors: Bell, A Harrison, I Cheng, TS Korakakis, D Foxon, CT Novikov, S Ber, BY Kudriavtsev, YA
Citation: A. Bell et al., An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy, SEMIC SCI T, 15(8), 2000, pp. 789-793
Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures
Authors: Gusev, OB Ber, BY Bresler, MS Zakharchenya, BP Yassievich, IN Khitrova, G Gibbs, HM Prineas, DP Lindmark, EK Masterov, VF
Citation: Ob. Gusev et al., Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures, PHYS SOL ST, 41(3), 1999, pp. 484-488
Investigation of MOVPE-grown GaN layers doped with As atoms
Authors: Tsatsul'nikov, AF Ber, BY Kartashova, AP Kudryavtsev, YA Ledentsov, NN Lundin, VV Maksimov, MV Sakharov, AV Usikov, AS Alferov, ZI Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures
Authors: Gerlovin, IY Dolgikh, YK Eliseev, SA Efimov, YP Nodokus, IA Ovsyankin, VV Petrov, VV Ber, BY
Citation: Iy. Gerlovin et al., Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures, SEMICONDUCT, 33(3), 1999, pp. 305-307
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
Authors: Tsirlin, GE Petrov, VN Polyakov, NK Masalov, SA Golubok, AO Denisov, DV Kudryavtsev, YA Ber, BY Ustinov, VM
Citation: Ge. Tsirlin et al., Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic, SEMICONDUCT, 33(10), 1999, pp. 1054-1058
Mg-doped hexagonal InN/Al2O3 films grown by MBE
Authors: Mamutin, VV Vekshin, VA Davydov, VY Ratnikov, VV Kudriavtsev, YA Ber, BY Emtsev, VV Ivanov, SV
Citation: Vv. Mamutin et al., Mg-doped hexagonal InN/Al2O3 films grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 373-378
Incorporation of Mg in GaN grown by molecular beam epitaxy
Authors: Orton, JW Foxon, CT Cheng, TS Hooper, SE Novikov, SV Ber, BY Kudriavtsev, YA
Citation: Jw. Orton et al., Incorporation of Mg in GaN grown by molecular beam epitaxy, J CRYST GR, 197(1-2), 1999, pp. 7-11
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films
Authors: Kudoyarova, VK Kuznetsov, AN Terukov, EI Gusev, OB Kudryavtsev, YA Ber, BY Gusinskii, GM Fuhs, W Weiser, G Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
Authors: Foxon, CT Hooper, SE Cheng, TS Orton, JW Ren, GB Ber, BY Merkulov, AV Novikov, SV Tret'yakov, VV
Citation: Ct. Foxon et al., Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux, SEMIC SCI T, 13(12), 1998, pp. 1469-1471
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