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Harrison, I
Cheng, TS
Korakakis, D
Foxon, CT
Novikov, S
Ber, BY
Kudriavtsev, YA
Citation: A. Bell et al., An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy, SEMIC SCI T, 15(8), 2000, pp. 789-793
Authors:
Gusev, OB
Ber, BY
Bresler, MS
Zakharchenya, BP
Yassievich, IN
Khitrova, G
Gibbs, HM
Prineas, DP
Lindmark, EK
Masterov, VF
Citation: Ob. Gusev et al., Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures, PHYS SOL ST, 41(3), 1999, pp. 484-488
Authors:
Tsatsul'nikov, AF
Ber, BY
Kartashova, AP
Kudryavtsev, YA
Ledentsov, NN
Lundin, VV
Maksimov, MV
Sakharov, AV
Usikov, AS
Alferov, ZI
Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Authors:
Tsirlin, GE
Petrov, VN
Polyakov, NK
Masalov, SA
Golubok, AO
Denisov, DV
Kudryavtsev, YA
Ber, BY
Ustinov, VM
Citation: Ge. Tsirlin et al., Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic, SEMICONDUCT, 33(10), 1999, pp. 1054-1058
Authors:
Kudoyarova, VK
Kuznetsov, AN
Terukov, EI
Gusev, OB
Kudryavtsev, YA
Ber, BY
Gusinskii, GM
Fuhs, W
Weiser, G
Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
Authors:
Foxon, CT
Hooper, SE
Cheng, TS
Orton, JW
Ren, GB
Ber, BY
Merkulov, AV
Novikov, SV
Tret'yakov, VV
Citation: Ct. Foxon et al., Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux, SEMIC SCI T, 13(12), 1998, pp. 1469-1471