Login
|
New Account
AAAAAA
ITA
ENG
Results:
1-5
|
Results: 5
Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs
Authors:
Egorov, AY Bedarev, D Bernklau, D Dumitras, G Riechert, H
Citation:
Ay. Egorov et al., Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs, PHYS ST S-B, 224(3), 2001, pp. 839-843
Growth of high quality InGaAsN heterostructures and their laser application
Authors:
Egorov, AY Bernklau, D Borchert, B Illek, S Livshits, D Rucki, A Schuster, M Kaschner, A Hoffmann, A Dumitras, G Amann, MC Riechert, H
Citation:
Ay. Egorov et al., Growth of high quality InGaAsN heterostructures and their laser application, J CRYST GR, 227, 2001, pp. 545-552
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
Authors:
Hetterich, M Dawson, MD Egorov, AY Bernklau, D Riechert, H
Citation:
M. Hetterich et al., Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content, APPL PHYS L, 76(8), 2000, pp. 1030-1032
High power CW operation of InGaAsN lasers at 1.3 mu m
Authors:
Egorov, AY Bernklau, D Livshits, D Ustinov, V Alferov, ZI Riechert, H
Citation:
Ay. Egorov et al., High power CW operation of InGaAsN lasers at 1.3 mu m, ELECTR LETT, 35(19), 1999, pp. 1643-1644
Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures
Authors:
Rotter, M Wixforth, A Govorov, AO Ruile, W Bernklau, D Riechert, H
Citation:
M. Rotter et al., Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures, APPL PHYS L, 75(7), 1999, pp. 965-967
Risultati:
1-5
|