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Citation: Nn. Bezryadin et al., Preparation of In2Se3 layers on InAs by heterovalent substitution, INORG MATER, 36(9), 2000, pp. 864-867

Authors: Agapov, BL Bezryadin, NN Kotov, GI Sumets, MP Arsent'ev, IN

Citation: Bl. Agapov et al., Reconstruction and electron states of a Ga2Se3-GaAs heterointerface, SEMICONDUCT, 33(6), 1999, pp. 658-661

Authors: Bezryadin, NN Domashevskaya, EP Kotov, GI Kuz'menko, RV Sumets, MP Arsent'ev, IN

Citation: Nn. Bezryadin et al., Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor, SEMICONDUCT, 33(6), 1999, pp. 665-667

Authors: Bezryadin, NN Tatokhin, EA Budanov, AV Linnik, AV Arsent'ev, IN

Citation: Nn. Bezryadin et al., Position of the Fermi level on an indium arsenide surface treated in sulfur vapor, SEMICONDUCT, 33(12), 1999, pp. 1301-1303