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Results: 1-10 |
Results: 10
Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
Authors: Pons, M Meziere, J Dedulle, JM Kuan, SWT Blanquet, E Bernard, C Ferret, P Di Cioccio, L Billon, T Madar, R
Citation: M. Pons et al., Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition, J PHYS IV, 11(PR3), 2001, pp. 1079-1086
Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications
Authors: Neyret, E Di Cioccio, L Bluet, JM Pernot, J Vicente, P Anglos, D Lagadas, M Billon, T
Citation: E. Neyret et al., Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications, MAT SCI E B, 80(1-3), 2001, pp. 332-336
Control of Al-implantation doping in 4H-SiC
Authors: Pernot, J Camassel, J Contreras, S Robert, JL Bluet, JM Michaud, JF Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365
Activation of aluminum implanted at high doses in 4H-SiC
Authors: Bluet, JM Pernot, J Camassel, J Contreras, S Robert, JL Michaud, JF Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977
Shallow and deep donors in transport properties of N-implanted 6H-SiC
Authors: Thomas, P Contreras, S Robert, JL Zawadzki, W Gimbert, J Billon, T
Citation: P. Thomas et al., Shallow and deep donors in transport properties of N-implanted 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 301-304
Nitrogen implantation in 4H and 6H-SiC
Authors: Gimbert, J Billon, T Ouisse, T Grisolia, J Ben-Assayag, G Jaussaud, C
Citation: J. Gimbert et al., Nitrogen implantation in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 368-372
Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes
Authors: Royet, AS Ouisse, T Billon, T Jaussaud, C Cabon, B
Citation: As. Royet et al., Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes, MAT SCI E B, 61-2, 1999, pp. 402-405
TEM studies of the defects introduced by ion implantation in SiC
Authors: Grisolia, J de Mauduit, B Gimbert, J Billon, T Ben Assayag, G Bourgerette, C Claverie, A
Citation: J. Grisolia et al., TEM studies of the defects introduced by ion implantation in SiC, NUCL INST B, 147(1-4), 1999, pp. 62-67
Oxidation of 6H-SiC(0001)
Authors: Simon, L Kubler, L Ermolieff, A Billon, T
Citation: L. Simon et al., Oxidation of 6H-SiC(0001), MICROEL ENG, 48(1-4), 1999, pp. 261-264
X-ray spectroscopy of the oxidation of 6H-SiC(0001)
Authors: Simon, L Kubler, L Ermolieff, A Billon, T
Citation: L. Simon et al., X-ray spectroscopy of the oxidation of 6H-SiC(0001), PHYS REV B, 60(8), 1999, pp. 5673-5678
Risultati: 1-10 |