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Results: 1-10 |
Results: 10
Electrical characterization of deep levels in N and P6H-SiC Schottky diodes
Authors: Sghaier, N Souifi, AK Bluet, JM Guillot, G
Citation: N. Sghaier et al., Electrical characterization of deep levels in N and P6H-SiC Schottky diodes, J MAT S-M E, 12(4-6), 2001, pp. 273-276
Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications
Authors: Neyret, E Di Cioccio, L Bluet, JM Pernot, J Vicente, P Anglos, D Lagadas, M Billon, T
Citation: E. Neyret et al., Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications, MAT SCI E B, 80(1-3), 2001, pp. 332-336
Control of Al-implantation doping in 4H-SiC
Authors: Pernot, J Camassel, J Contreras, S Robert, JL Bluet, JM Michaud, JF Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365
Activation of aluminum implanted at high doses in 4H-SiC
Authors: Bluet, JM Pernot, J Camassel, J Contreras, S Robert, JL Michaud, JF Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977
Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals
Authors: Grosse, P Basset, G Calvat, C Couchaud, M Faure, C Ferrand, B Grange, Y Anikin, M Bluet, JM Chourou, K Madar, R
Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62
Influence of growth conditions on the defect formation in SiC ingots
Authors: Anikin, M Chourou, K Pons, M Bluet, JM Madar, R Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76
Modelling of SiC sublimation growth process: analyses of macrodefects formation
Authors: Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85
Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes
Authors: Bluet, JM Chourou, K Anikin, M Madar, R
Citation: Jm. Bluet et al., Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes, MAT SCI E B, 61-2, 1999, pp. 212-216
Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition
Authors: Neyret, E Ferro, G Juillaguet, S Bluet, JM Jaussaud, C Camassel, J
Citation: E. Neyret et al., Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 253-257
Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport
Authors: Camassel, J Juillaguet, S Planes, N Raymond, A Grosse, P Basset, G Faure, C Couchaud, M Bluet, JM Chourou, K Anikin, M Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264
Risultati: 1-10 |