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Results:
1-8
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Results: 8
Authors:
Levin, MN
Bormontov, EN
Volkov, OV
Ostroukhov, SS
Tatarintsev, AV
Citation: Mn. Levin et al., Charge distribution in a MIS insulator from spectral characteristics of photoemission current, TECH PHYS, 46(3), 2001, pp. 316-321
Authors:
Bormontov, EN
Levin, MN
Vyalykh, SA
Borisov, SN
Citation: En. Bormontov et al., Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters, TECH PHYS, 46(2), 2001, pp. 192-197
Authors:
Tutov, EA
Andryukov, AY
Bormontov, EN
Citation: Ea. Tutov et al., Adsorption-based porosimetry using capacitance measurements, SEMICONDUCT, 35(7), 2001, pp. 816-820
Authors:
Ryabtsev, SV
Tutov, EA
Bormontov, EN
Shaposhnik, AV
Ivanov, AV
Citation: Sv. Ryabtsev et al., Interaction of metal nanoparticles with a semiconductor in surface-doped gas sensors, SEMICONDUCT, 35(7), 2001, pp. 835-839
Authors:
Bormontov, EN
Borisov, SN
Lezhenin, VP
Lukin, SV
Citation: En. Bormontov et al., Rapid monitoring of the charging properties of ion-doped MOS structures, TECH PHYS L, 26(11), 2000, pp. 971-973
Authors:
Bormontov, EN
Levin, MN
Nakhmanson, RS
Citation: En. Bormontov et al., Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects, SOL ST ELEC, 44(8), 2000, pp. 1441-1446
Transient spectroscopy of surface states in a constant subthreshold current mode for MIS transistors
Authors:
Levin, MN
Bormontov, EN
Tatarintsev, AV
Gitlin, VR
Citation: Mn. Levin et al., Transient spectroscopy of surface states in a constant subthreshold current mode for MIS transistors, TECH PHYS, 44(8), 1999, pp. 923-927
Authors:
Bormontov, EN
Lukin, SV
Nakhmanson, RS
Citation: En. Bormontov et al., Tunnel-fluctuation model of the MIS admittance, SOL ST ELEC, 43(2), 1999, pp. 177-187
Risultati:
1-8
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