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Results: 1-9 |
Results: 9
Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films
Authors: Pentia, E Pintilie, L Tivarus, C Pintilie, I Botila, T
Citation: E. Pentia et al., Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films, MAT SCI E B, 80(1-3), 2001, pp. 23-26
Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, G Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Mikuz, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration, NUCL INST A, 466(2), 2001, pp. 308-326
Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, C Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Miku, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Radicci, V Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration, NUCL INST A, 465(1), 2001, pp. 60-69
Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
Authors: Pintilie, I Tivarus, C Botila, T Petre, D Pintilie, L
Citation: I. Pintilie et al., Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy, NUCL INST A, 439(2-3), 2000, pp. 221-227
Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents
Authors: Pintilie, I Petre, D Pintilie, L Tivarus, C Petris, M Botila, T
Citation: I. Pintilie et al., Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents, NUCL INST A, 439(2-3), 2000, pp. 303-309
Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si3N4/n-Si substrates
Authors: Pintilie, L Pentia, E Pintilie, I Botila, T
Citation: L. Pintilie et al., Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si3N4/n-Si substrates, APPL PHYS L, 76(14), 2000, pp. 1890-1892
Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents
Authors: Pintilie, L Pintilie, I Petre, D Botila, T Alexe, M
Citation: L. Pintilie et al., Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents, APPL PHYS A, 69(1), 1999, pp. 105-109
The influence of Cu doping on opto-electronic properties of chemically deposited CdS
Authors: Petre, D Pintilie, I Pentia, E Pintilie, I Botila, T
Citation: D. Petre et al., The influence of Cu doping on opto-electronic properties of chemically deposited CdS, MAT SCI E B, 58(3), 1999, pp. 238-243
Photoelectric properties of sandwich Au/Bi(4)Ti(3)0(12) /Si/Al heterostructures
Authors: Pintilie, L Pintilie, I Botila, T
Citation: L. Pintilie et al., Photoelectric properties of sandwich Au/Bi(4)Ti(3)0(12) /Si/Al heterostructures, SEMIC SCI T, 14(10), 1999, pp. 928-935
Risultati: 1-9 |