Authors:
Bourdelle, KK
Gossmann, HJL
Chaudhry, S
Agarwal, A
Citation: Kk. Bourdelle et al., The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides, IEEE ELEC D, 22(6), 2001, pp. 284-286
Authors:
Bourdelle, KK
Chen, YN
Ashton, RA
Rubin, LM
Agarwal, A
Morris, WH
Citation: Kk. Bourdelle et al., Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology, IEEE DEVICE, 48(9), 2001, pp. 2043-2049
Authors:
Timp, G
Bude, J
Baumann, F
Bourdelle, KK
Boone, T
Garno, J
Ghetti, A
Green, M
Gossmann, H
Kim, Y
Kleiman, R
Kornblit, A
Klemens, F
Moccio, S
Muller, D
Rosamilia, J
Silverman, P
Sorsch, T
Timp, W
Tennant, D
Tung, R
Weir, B
Citation: G. Timp et al., The relentless march of the MOSFET gate oxide thickness to zero, MICROEL REL, 40(4-5), 2000, pp. 557-562
Authors:
Bourdelle, KK
Eaglesham, DJ
Jacobson, DC
Poate, JM
Citation: Kk. Bourdelle et al., The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon, J APPL PHYS, 86(3), 1999, pp. 1221-1225