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Results: 1-7 |
Results: 7
The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides
Authors: Bourdelle, KK Gossmann, HJL Chaudhry, S Agarwal, A
Citation: Kk. Bourdelle et al., The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides, IEEE ELEC D, 22(6), 2001, pp. 284-286
Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology
Authors: Bourdelle, KK Chen, YN Ashton, RA Rubin, LM Agarwal, A Morris, WH
Citation: Kk. Bourdelle et al., Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology, IEEE DEVICE, 48(9), 2001, pp. 2043-2049
Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2
Authors: Fiory, AT Bourdelle, KK Roy, PK
Citation: At. Fiory et al., Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2, APPL PHYS L, 78(8), 2001, pp. 1071-1073
The relentless march of the MOSFET gate oxide thickness to zero
Authors: Timp, G Bude, J Baumann, F Bourdelle, KK Boone, T Garno, J Ghetti, A Green, M Gossmann, H Kim, Y Kleiman, R Kornblit, A Klemens, F Moccio, S Muller, D Rosamilia, J Silverman, P Sorsch, T Timp, W Tennant, D Tung, R Weir, B
Citation: G. Timp et al., The relentless march of the MOSFET gate oxide thickness to zero, MICROEL REL, 40(4-5), 2000, pp. 557-562
Thermal activation of shallow boron-ion implants
Authors: Fiory, AT Bourdelle, KK
Citation: At. Fiory et Kk. Bourdelle, Thermal activation of shallow boron-ion implants, J ELEC MAT, 28(12), 1999, pp. 1345-1352
The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon
Authors: Bourdelle, KK Eaglesham, DJ Jacobson, DC Poate, JM
Citation: Kk. Bourdelle et al., The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon, J APPL PHYS, 86(3), 1999, pp. 1221-1225
Electrical activation kinetics for shallow boron implants in silicon
Authors: Fiory, AT Bourdelle, KK
Citation: At. Fiory et Kk. Bourdelle, Electrical activation kinetics for shallow boron implants in silicon, APPL PHYS L, 74(18), 1999, pp. 2658-2660
Risultati: 1-7 |