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Results: 1-10 |
Results: 10

Authors: Bourdillon, AJ
Citation: Aj. Bourdillon, Use of the track structure approach in TEM, ULTRAMICROS, 83(3-4), 2000, pp. 261-264

Authors: Bourdillon, AJ Boothroyd, CB Kong, JR Vladimirsky, Y
Citation: Aj. Bourdillon et al., A critical condition in Fresnel diffraction used for ultra-high resolutionlithographic printing, J PHYS D, 33(17), 2000, pp. 2133-2141

Authors: Lu, B Taylor, JW Cerrina, F See, CP Bourdillon, AJ
Citation: B. Lu et al., Study of acid diffusion in a positive tone chemically amplified resist using an on-wafer imaging technique, J VAC SCI B, 17(6), 1999, pp. 3345-3350

Authors: Soo, CP Valiyaveettil, S Huan, A Wee, A Ang, TC Fan, MH Bourdillon, AJ Chan, LH
Citation: Cp. Soo et al., Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminants, IEEE SEMIC, 12(4), 1999, pp. 462-469

Authors: Soo, CP Bourdillon, AJ Valiyaveettil, S Huan, A Wee, A Fan, MH Ang, TC Chan, LH
Citation: Cp. Soo et al., Improvement an lithography pattern profile by plasma treatment, J VAC SCI A, 17(4), 1999, pp. 1526-1530

Authors: Lim, CW Bourdillon, AJ Gong, H Lahiri, SK Pey, KL Lee, KH
Citation: Cw. Lim et al., A study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications, J MAT SCI L, 18(9), 1999, pp. 743-746

Authors: Jia, YM Lim, CW Bourdillon, AJ Boothroyd, C
Citation: Ym. Jia et al., Transmission electron microscopy observation od CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process, J MAT SCI L, 18(5), 1999, pp. 385-388

Authors: Cha, CL Chor, EF Jia, YM Bourdillon, AJ Gong, H Pan, JS Zhang, AQ Tang, SK Boothroyd, CB
Citation: Cl. Cha et al., Evaluation of silicon nitride and silicon carbide as efficient polysilicongrain-growth inhibitors, J MAT SCI L, 18(17), 1999, pp. 1427-1431

Authors: Cha, CL Chor, EF Gong, H Bourdillon, AJ Jia, YM Pan, JS Zhang, AQ Chan, L
Citation: Cl. Cha et al., Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation, APPL PHYS L, 75(3), 1999, pp. 355-357

Authors: Cha, CL Tee, KC Chor, EF Gong, H Prasad, K Bourdillon, AJ See, A Chan, L Lee, MMO
Citation: Cl. Cha et al., Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid, APPL PHYS L, 75(26), 1999, pp. 4192-4194
Risultati: 1-10 |