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Results: 1-25/35
Authors:
Waltereit, P
Brandt, O
Ploog, KH
Tagliente, MA
Tapfer, L
Citation: P. Waltereit et al., Indium surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 49-53
Authors:
Brandt, O
Muralidharan, R
Thamm, A
Waltereit, P
Ploog, KH
Citation: O. Brandt et al., Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy, APPL SURF S, 175, 2001, pp. 419-427
Authors:
Cobet, C
Esser, N
Zetter, JT
Richter, W
Waltereit, P
Brandt, O
Ploog, KH
Peters, S
Edwards, NV
Lindquist, OPA
Cardona, M
Citation: C. Cobet et al., Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis - art. no. 165203, PHYS REV B, 6416(16), 2001, pp. 5203
Authors:
Chichibu, SF
Sota, T
Wada, K
Brandt, O
Ploog, KH
DenBaars, SP
Nakamura, S
Citation: Sf. Chichibu et al., Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes, PHYS ST S-A, 183(1), 2001, pp. 91-98
Authors:
Vietzke, JP
Brandt, O
Abeck, D
Rapp, C
Strassner, M
Schreiner, V
Hintze, U
Citation: Jp. Vietzke et al., Comparative investigation of human stratum corneum ceramides, LIPIDS, 36(3), 2001, pp. 299-304
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Optimization of the signal-to-noise ratio for photoreflectance spectroscopy, J APPL PHYS, 90(10), 2001, pp. 5081-5085
Authors:
Giehler, M
Ramsteiner, M
Waltereit, P
Brandt, O
Ploog, KH
Obloh, H
Citation: M. Giehler et al., Influence of heteroepitaxy on the width and frequency of the E-2 (high)-phonon line in GaN studied by Raman spectroscopy, J APPL PHYS, 89(7), 2001, pp. 3634-3641
Authors:
Chichibu, SF
Wada, K
Mullhauser, J
Brandt, O
Ploog, KH
Mizutani, T
Setoguchi, A
Nakai, R
Sugiyama, M
Nakanishi, H
Torii, K
Deguchi, T
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (vol 76, pg 1671, 2000), APPL PHYS L, 78(5), 2001, pp. 679-679
Authors:
Ploog, KH
Brandt, O
Muralidharan, R
Thamm, A
Waltereit, P
Citation: Kh. Ploog et al., Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001)by both plasma-assisted and reactive molecular beam epitaxy, J VAC SCI B, 18(4), 2000, pp. 2290-2294
Authors:
Thamm, A
Brandt, O
Ringling, J
Trampert, A
Ploog, KH
Mayrock, O
Wunsche, HJ
Henneberger, F
Citation: A. Thamm et al., Optical properties of heavily doped GaN/(Al,Ga)N multiple quantum wells grown on 6H-SiC(0001) by reactive molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 16025-16028
Authors:
Thamm, A
Brandt, O
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 73-79
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138
Authors:
Chichibui, SF
Setoguchi, A
Azuhata, T
Mullhauser, J
Sugiyama, M
Mizutani, T
Deguchi, T
Nakanishi, H
Sota, T
Brandt, O
Ploog, KH
Mukai, T
Nakamura, S
Citation: Sf. Chichibui et al., Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction, PHYS ST S-A, 180(1), 2000, pp. 321-325
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 381-386
Authors:
Waltereit, P
Brandt, O
Trampert, A
Grahn, HT
Menniger, J
Ramsteiner, M
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00) on gamma-LiAlO2(100), J CRYST GR, 218(2-4), 2000, pp. 143-147
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4315-4318
Authors:
Rau, B
Waltereit, P
Brandt, O
Ramsteiner, M
Ploog, KH
Puls, J
Henneberger, F
Citation: B. Rau et al., In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells, APPL PHYS L, 77(21), 2000, pp. 3343-3345
Authors:
Chichibu, SF
Wada, K
Mullhauser, J
Brandt, O
Ploog, KH
Mizutani, T
Setoguchi, A
Nakai, R
Sugiyama, M
Nakanishi, H
Korii, K
Deguchi, T
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes, APPL PHYS L, 76(13), 2000, pp. 1671-1673
Authors:
Brandt, O
Mullhauser, JR
Trampert, A
Ploog, KH
Citation: O. Brandt et al., Properties of cubic (In,Ga)N grown by molecular beam epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 73-79
Authors:
Mayrock, O
Wunsche, HJ
Henneberger, F
Brandt, O
Citation: O. Mayrock et al., Influence of internal polarization fields on the disorder broadening of excitons in (In,Ga)N/GaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 419-422
Authors:
Steube, M
Reimann, K
Brandt, O
Yang, H
Ploog, KH
Citation: M. Steube et al., High pressure luminescence of zincblende and wurtzite GaN, PHYS ST S-B, 211(1), 1999, pp. 57-61
Authors:
Bleck, O
Abeck, D
Ring, J
Hoppe, U
Vietzke, JP
Wolber, R
Brandt, O
Schreiner, V
Citation: O. Bleck et al., Two ceramide subfractions detectable in Cer(AS) position by HPTLC in skin surface lipids of non-lesional skin of atopic eczema, J INVES DER, 113(6), 1999, pp. 894-900
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE
Authors:
Trampert, A
Brandt, O
Yang, B
Jenichen, B
Ploog, KH
Citation: A. Trampert et al., Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE, J CRYST GR, 202, 1999, pp. 407-410