Authors:
Benabdesselam, M
Iacconi, P
Butler, JE
Briand, D
Citation: M. Benabdesselam et al., Thermoluminescence properties of nitrogen containing chemical vapour deposited diamond films, DIAM RELAT, 10(11), 2001, pp. 2084-2091
Authors:
Pichon, L
Mourgues, K
Raoult, F
Mohammed-Brahim, T
Kis-Sion, K
Briand, D
Bonnaud, O
Citation: L. Pichon et al., Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization, SEMIC SCI T, 16(11), 2001, pp. 918-924
Authors:
Benabdesselam, M
Iacconi, P
Briand, D
Lapraz, T
Gheeraert, E
Deneuville, A
Citation: M. Benabdesselam et al., Characterisation by thermoluminescence of boron doped polycrystalline diamond films, DIAM RELAT, 9(1), 2000, pp. 56-60
Authors:
Briand, D
Krauss, A
van der Schoot, B
Weimar, U
Barsan, N
Gopel, W
de Rooij, NF
Citation: D. Briand et al., Design and fabrication of high-temperature micro-hotplates for drop-coatedgas sensors, SENS ACTU-B, 68(1-3), 2000, pp. 223-233
Authors:
Briand, D
Sarret, M
Kis-Sion, K
Mohammed-Brahim, T
Duverneuil, P
Citation: D. Briand et al., In situ doping of silicon deposited by LPCVD: pressure influence on dopantincorporation mechanisms, SEMIC SCI T, 14(2), 1999, pp. 173-180