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Results: 1-22 |
Results: 22
Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films
Authors: Brillson, LJ
Citation: Lj. Brillson, Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films, J VAC SCI B, 19(5), 2001, pp. 1762-1768
Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy
Authors: Goss, SH Parkin, SSP Brillson, LJ
Citation: Sh. Goss et al., Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy, J VAC SCI A, 19(4), 2001, pp. 1199-1202
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ
Citation: St. Bradley et al., Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures, J ELEC MAT, 30(3), 2001, pp. 123-128
Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces
Authors: Brillson, LJ Young, AP Jessen, GH Levin, TM Bradley, ST Goss, SH Bae, J Ponce, FA Murphy, MJ Schaff, WJ Eastman, LF
Citation: Lj. Brillson et al., Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces, APPL SURF S, 175, 2001, pp. 442-449
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ Eastman, LF
Citation: St. Bradley et al., Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement, IEEE DEVICE, 48(3), 2001, pp. 412-415
Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation
Authors: Okojie, RS Xhang, M Pirouz, P Tumakha, S Jessen, G Brillson, LJ
Citation: Rs. Okojie et al., Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation, APPL PHYS L, 79(19), 2001, pp. 3056-3058
Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
Authors: Goss, SH Sun, XL Young, AP Brillson, LJ Look, DC Molnar, RJ
Citation: Sh. Goss et al., Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces, APPL PHYS L, 78(23), 2001, pp. 3630-3632
The effect of nitrogen ion damage on the optical and electrical propertiesof MBE GaN grown on MOCVD GaN/sapphire templates
Authors: Young, AP Brillson, LJ Naoi, Y Tu, CW
Citation: Ap. Young et al., The effect of nitrogen ion damage on the optical and electrical propertiesof MBE GaN grown on MOCVD GaN/sapphire templates, MRS I J N S, 5, 2000, pp. NIL_679-NIL_684
Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures
Authors: Young, AP Bae, J Brillson, LJ Murphy, MJ Schaff, WJ
Citation: Ap. Young et al., Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures, J VAC SCI B, 18(4), 2000, pp. 2309-2312
Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces
Authors: Brillson, LJ Young, AP White, BD Schafer, J Niimi, H Lee, YM Lucovsky, G
Citation: Lj. Brillson et al., Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces, J VAC SCI B, 18(3), 2000, pp. 1737-1741
Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces
Authors: Brillson, LJ Young, AP Levin, TM Jessen, GH Schafer, J Yang, Y Xu, SH Cruguel, H Lapeyre, GJ Ponce, FA Naoi, Y Tu, C McKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces, MAT SCI E B, 75(2-3), 2000, pp. 218-223
Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AlN
Authors: Young, AP Goss, SH Brillson, LJ Mackenzie, JD Abernathy, CR
Citation: Ap. Young et al., Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AlN, J ELEC MAT, 29(3), 2000, pp. 311-316
Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation
Authors: White, BD Brillson, LJ Lee, SC Fleetwood, DM Schrimpf, RD Pantelides, ST Lee, YM Lucovsky, G
Citation: Bd. White et al., Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation, IEEE NUCL S, 47(6), 2000, pp. 2276-2280
Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 degrees C
Authors: Young, AP Brillson, LJ
Citation: Ap. Young et Lj. Brillson, Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 degrees C, APPL PHYS L, 77(5), 2000, pp. 699-701
Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells
Authors: Levin, TM Jessen, GH Ponce, FA Brillson, LJ
Citation: Tm. Levin et al., Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells, J VAC SCI B, 17(6), 1999, pp. 2545-2552
Defect formation near GaN surfaces and interfaces
Authors: Brillson, LJ Levin, TM Jessen, GH Young, AP Tu, C Naoi, Y Ponce, FA Yang, Y Lapeyre, GJ MacKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Defect formation near GaN surfaces and interfaces, PHYSICA B, 274, 1999, pp. 70-74
Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces
Authors: Levin, TM Young, AP Schafer, J Brillson, LJ MacKenzie, JD Abernathy, CR
Citation: Tm. Levin et al., Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces, J VAC SCI A, 17(6), 1999, pp. 3437-3442
Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces
Authors: Young, AP Jones, J Brillson, LJ
Citation: Ap. Young et al., Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces, J VAC SCI A, 17(5), 1999, pp. 2692-2695
Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer
Authors: Schafer, J Young, AP Levin, TM Brillson, LJ Paggel, JJ Vanzetti, L Franciosi, A
Citation: J. Schafer et al., Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer, J ELEC MAT, 28(7), 1999, pp. 881-886
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy
Authors: Young, AP Schafer, J Brillson, LJ Yang, Y Xu, SH Cruguel, H Lapeyre, GJ Johnson, MAL Schetzina, JF
Citation: Ap. Young et al., Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy, J ELEC MAT, 28(3), 1999, pp. 308-313
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy
Authors: Hierro, A Kwon, D Goss, SH Brillson, LJ Ringel, SA Rubini, S Pelucchi, E Franciosi, A
Citation: A. Hierro et al., Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy, APPL PHYS L, 75(6), 1999, pp. 832-834
Localized states at InGaN/GaN quantum well interfaces
Authors: Brillson, LJ Levin, TM Jessen, GH Ponce, FA
Citation: Lj. Brillson et al., Localized states at InGaN/GaN quantum well interfaces, APPL PHYS L, 75(24), 1999, pp. 3835-3837
Risultati: 1-22 |