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Daudin, B
Feuillet, G
Mariette, H
Genuist, Y
Fanget, S
Philippe, A
Dubois, C
Bru-Chevallier, C
Guillot, G
Nze, PA
Chassagne, T
Monteil, Y
Gamez-Cuatzin, H
Tardy, J
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Authors:
Grenouillet, L
Bru-Chevallier, C
Guillot, G
Gilet, P
Duvaut, P
Vannuffel, C
Million, A
Chenevas-Paule, A
Citation: L. Grenouillet et al., Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well, APPL PHYS L, 76(16), 2000, pp. 2241-2243
Authors:
Philippe, A
Bru-Chevallier, C
Gamez-Cuatzin, H
Guillot, G
Martinez-Guerrero, E
Feuillet, G
Daudin, B
Aboughe-Nze, P
Monteil, Y
Citation: A. Philippe et al., Optical study of cubic gallium nitride band-edge and relation with residual strain, PHYS ST S-B, 216(1), 1999, pp. 247-252
Authors:
Gamez-Cuatzin, H
Tardy, J
Rojo-Romeo, P
Philippe, A
Bru-Chevallier, C
Souifi, A
Guillot, G
Martinez-Guerrero, E
Feuillet, G
Daudin, B
Aboughe-Nze, P
Monteil, Y
Citation: H. Gamez-cuatzin et al., Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE, PHYS ST S-A, 176(1), 1999, pp. 131-135
Authors:
Bru-Chevallier, C
Baltagi, Y
Guillot, G
Hong, K
Pavlidis, D
Citation: C. Bru-chevallier et al., Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces, J APPL PHYS, 84(9), 1998, pp. 5291-5295