Authors:
Liu, XF
Qiu, BC
Ke, ML
Bryce, AC
Marsh, JH
Citation: Xf. Liu et al., Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers, IEEE PHOTON, 12(9), 2000, pp. 1141-1143
Authors:
Ke, ML
Allan, BD
Liu, XF
Boyd, A
Qiu, BC
Qian, YH
Hamilton, CJ
McDougall, SD
Kowalski, OP
Bryce, AC
De La Rue, RM
Marsh, JH
Citation: Ml. Ke et al., Monolithically integrated distributed Bragg reflector lasers for 1.5 mu m operation with band gap shifted grating section, OPT MATER, 14(3), 2000, pp. 193-196
Authors:
Helmy, AS
Hutchings, DC
Kleckner, TC
Marsh, JH
Bryce, AC
Arnold, JM
Stanley, CR
Aitchison, JS
Brown, CTA
Moutzouris, K
Ebrahimzadeh, M
Citation: As. Helmy et al., Quasi phase matching in GaAs-AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing, OPTICS LETT, 25(18), 2000, pp. 1370-1372
Authors:
Bhattacharyya, D
Helmy, AS
Bryce, AC
Avrutin, EA
Marsh, JH
Citation: D. Bhattacharyya et al., Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing, J APPL PHYS, 88(8), 2000, pp. 4619-4622
Citation: Jh. Marsh et Ac. Bryce, Impurity-free vacancy disordering of GaAs/AlGaAs quantum well structures: Processing and devices, OPTOEL PROP, 8, 2000, pp. 339-370
Authors:
Qiu, BC
Hamilton, CJ
Ke, ML
Kowalski, OP
McDougall, SD
Bryce, AC
Marsh, JH
Citation: Bc. Qiu et al., Extended cavity lasers in InGaAs-InGaAsP and GaInP-AlGaInP multi-quantum well structure using a sputtered SiO2 technique, JPN J A P 1, 38(2B), 1999, pp. 1246-1248
Authors:
Bhattacharyya, D
Avrutin, EA
Bryce, AC
Marsh, JH
Bimberg, D
Heinrichsdorff, F
Ustinov, VM
Zaitsev, SV
Ledentsov, NN
Kop'ev, PS
Alferov, ZI
Onischenko, AI
O'Reilly, EP
Citation: D. Bhattacharyya et al., Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers, IEEE S T QU, 5(3), 1999, pp. 648-657
Authors:
Helmy, AS
Murad, SK
Bryce, AC
Aitchison, JS
Marsh, JH
Hicks, SE
Wilkinson, CDW
Citation: As. Helmy et al., Control of silica cap properties by oxygen plasma treatment for single-capselective impurity free vacancy disordering, APPL PHYS L, 74(5), 1999, pp. 732-734