Authors: Palestri, P Pacelli, A Mastrapasqua, M Bude, JD

Citation: P. Palestri et al., Monte Carlo simulation of impact ionization in SiGeHBTs, IEEE ELEC D, 22(11), 2001, pp. 533-535

Authors: Esseni, D Bude, JD Selmi, L

Citation: D. Esseni et al., Experimental study of low voltage anode hole injection in thin oxides, MICROEL ENG, 59(1-4), 2001, pp. 55-60

Authors: Weir, BE Alam, MA Bude, JD Silverman, PJ Ghetti, A Baumann, F Diodato, P Monroe, D Sorsch, T Timp, GL Ma, Y Brown, MM Hamad, A Hwang, D Mason, P

Citation: Be. Weir et al., Gate oxide reliability projection to the sub-2 nm regime, SEMIC SCI T, 15(5), 2000, pp. 455-461

Authors: Bude, JD Pinto, MR Smith, RK

Citation: Jd. Bude et al., Monte Carlo simulation of the CHISEL flash memory cell, IEEE DEVICE, 47(10), 2000, pp. 1873-1881

Authors: Pavesi, M Selmi, L Manfredi, M Sangiorgi, E Mastrapasqua, M Bude, JD

Citation: M. Pavesi et al., Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFET's by light emission measurements, IEEE ELEC D, 20(11), 1999, pp. 595-597