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Results: 1-8 |
Results: 8
Two-dimensional hole gas induced by piezoelectric and pyroelectric charges
Authors: Shur, MS Bykhovski, AD Gaska, R
Citation: Ms. Shur et al., Two-dimensional hole gas induced by piezoelectric and pyroelectric charges, SOL ST ELEC, 44(2), 2000, pp. 205-210
Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN
Authors: Gaska, R Shur, MS Bykhovski, AD Yang, JW Khan, MA Kaminski, VV Soloviov, SM
Citation: R. Gaska et al., Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN, APPL PHYS L, 76(26), 2000, pp. 3956-3958
AlGaN-GaN-AlInGaN induced base transistor
Authors: Shur, MS Bykhovski, AD Gaska, R Khan, MA Yang, JW
Citation: Ms. Shur et al., AlGaN-GaN-AlInGaN induced base transistor, APPL PHYS L, 76(22), 2000, pp. 3298-3300
Accumulation hole layer in p-GaN/AlGaN heterostructures
Authors: Shur, MS Bykhovski, AD Gaska, R Yang, JW Simin, G Khan, MA
Citation: Ms. Shur et al., Accumulation hole layer in p-GaN/AlGaN heterostructures, APPL PHYS L, 76(21), 2000, pp. 3061-3063
Piezoresistive effect in AlN/GaN short range superlattice structures
Authors: Gaska, R Bykhovski, AD Shur, MS Kaminskii, VV Soloviov, SM
Citation: R. Gaska et al., Piezoresistive effect in AlN/GaN short range superlattice structures, J APPL PHYS, 85(9), 1999, pp. 6932-6934
Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
Authors: Gaska, R Shur, MS Fjeldly, TA Bykhovski, AD
Citation: R. Gaska et al., Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications, J APPL PHYS, 85(5), 1999, pp. 3009-3011
Electron mobility in modulation-doped AlGaN-GaN heterostructures
Authors: Gaska, R Shur, MS Bykhovski, AD Orlov, AO Snider, GL
Citation: R. Gaska et al., Electron mobility in modulation-doped AlGaN-GaN heterostructures, APPL PHYS L, 74(2), 1999, pp. 287-289
Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors
Authors: Bykhovski, AD Gaska, R Shur, MS
Citation: Ad. Bykhovski et al., Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors, APPL PHYS L, 73(24), 1998, pp. 3577-3579
Risultati: 1-8 |