Authors:
Gaska, R
Shur, MS
Fjeldly, TA
Bykhovski, AD
Citation: R. Gaska et al., Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications, J APPL PHYS, 85(5), 1999, pp. 3009-3011
Citation: Ad. Bykhovski et al., Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors, APPL PHYS L, 73(24), 1998, pp. 3577-3579