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Results:
1-13
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Results: 13
Authors:
CACCIATO A
RAINERI V
Citation: A. Cacciato et V. Raineri, DAMAGE ENGINEERING AND PROXIMITY GETTERING OF METALS STUDIED BY ELECTRICAL MEASUREMENTS ON PT-CONTAMINATED DIODES, Semiconductor science and technology, 13(8), 1998, pp. 941-949
Authors:
CACCIATO A
VLEESHOUWERS S
EVSEEV S
Citation: A. Cacciato et al., FAST-FEEDBACK IRON CONTAMINATION MONITORING USING SURFACE PHOTOVOLTAGE MEASUREMENTS, Journal of the Electrochemical Society, 145(2), 1998, pp. 701-706
Authors:
POLIGNANO ML
CAZZANIGA F
SABBADINI A
QUEIROLO G
CACCIATO A
DIBARTOLO A
Citation: Ml. Polignano et al., COMPARISON AMONG LIFETIME TECHNIQUES FOR THE DETECTION OF TRANSITION-METAL CONTAMINATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 157-163
Authors:
CACCIATO A
CAMALLERI CM
FRANCO G
RAINERI V
COFFA S
Citation: A. Cacciato et al., EFFICIENCY AND THERMAL-STABILITY OF PT GETTERING IN CRYSTALLINE SI, Journal of applied physics, 80(8), 1996, pp. 4322-4327
Authors:
LOMBARDO S
CACCIATO A
LARSEN KK
RAINERI V
LAVIA F
PRIVITERA V
CAMPISANO SU
Citation: S. Lombardo et al., HIGH-TEMPERATURE ANNEALING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF C IMPLANTED SI, Journal of applied physics, 79(7), 1996, pp. 3464-3469
Authors:
CACCIATO A
KLAPPE JGE
COWERN NEB
VANDERVOST W
BIRO LP
CUSTER JS
SARIS FW
Citation: A. Cacciato et al., DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED SI, Journal of applied physics, 79(5), 1996, pp. 2314-2325
Authors:
COWERN NEB
CACCIATO A
CUSTER JS
SARIS FW
VANDERVORST W
Citation: Neb. Cowern et al., ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON, Applied physics letters, 68(8), 1996, pp. 1150-1152
Authors:
SNOEKS E
WEBER T
CACCIATO A
POLMAN A
Citation: E. Snoeks et al., MEV ION IRRADIATION-INDUCED CREATION AND RELAXATION OF MECHANICAL-STRESS IN SILICA, Journal of applied physics, 78(7), 1995, pp. 4723-4732
Authors:
PRIOLO F
BENYAICH F
CAMPISANO SU
RIMINI E
SPINELLA C
CACCIATO A
WARD P
FALLICO G
Citation: F. Priolo et al., INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 159-166
Authors:
CACCIATO A
BENYAICH F
SPINELLA C
RIMINI E
FALLICO G
WARD P
Citation: A. Cacciato et al., STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 18(3), 1993, pp. 289-294
Authors:
SPINELLA C
BENYAICH F
CACCIATO A
RIMINI E
FALLICO G
WARD P
Citation: C. Spinella et al., ROLE OF GRAIN-BOUNDARIES IN THE EPITAXIAL REALIGNMENT OF UNDOPED AND AS-DOPED POLYCRYSTALLINE SILICON FILMS, Journal of materials research, 8(10), 1993, pp. 2608-2612
Authors:
LOMBARDO S
CAMPISANO SU
VANDENHOVEN GN
CACCIATO A
POLMAN A
Citation: S. Lombardo et al., ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON, Applied physics letters, 63(14), 1993, pp. 1942-1944
Authors:
BENYAICH F
RIMINI E
SPINELLA C
CACCIATO A
FALLICO G
FERLA G
WARD P
Citation: F. Benyaich et al., SIZE EFFECTS IN THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ONTO SI SUBSTRATES, Applied physics letters, 62(16), 1993, pp. 1895-1897
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