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Results: 1-25 | 26-34 |
Results: 26-34/34
SURFACE DAMAGE PRODUCED BY 20 KEV GA BOMBARDMENT OF GE(001)
Authors: BELLON P CHEY SJ VANNOSTRAND JE GHALY M CAHILL DG AVERBACK RS
Citation: P. Bellon et al., SURFACE DAMAGE PRODUCED BY 20 KEV GA BOMBARDMENT OF GE(001), Surface science, 339(1-2), 1995, pp. 135-141
CHARACTERISTICS OF IN-SITU DEPOSITED GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
Authors: REED J TAO M PARK DG BOTCHKAREV A FAN Z SUZUE SK LI D GAO GB MOHAMMAD SN CHEY SJ VANNOSTRAND JE CAHILL DG MORKOC H
Citation: J. Reed et al., CHARACTERISTICS OF IN-SITU DEPOSITED GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Solid-state electronics, 38(7), 1995, pp. 1351-1357
SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001)
Authors: VANNOSTRAND JE CHEY SJ HASAN MA CAHILL DG GREENE JE
Citation: Je. Vannostrand et al., SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001), Physical review letters, 74(7), 1995, pp. 1127-1130
GAAS-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH LOW INTERFACE TRAPS USING MOLECULAR-BEAM EPITAXY AND CHEMICAL-VAPOR-DEPOSITION
Authors: PARK DG TAO M REED J SUZUE K BOTCHKAREV AE FAN Z GAO GB CHEY SJ VANNOSTRAND J CAHILL DG MORKOC H
Citation: Dg. Park et al., GAAS-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH LOW INTERFACE TRAPS USING MOLECULAR-BEAM EPITAXY AND CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 150(1-4), 1995, pp. 1275-1280
IMPROVED SI3N4 SI/GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES BY IN-SITU ANNEAL OF THE AS-DEPOSITED SI/
Authors: TAO M BOTCHKAREV AE PARK D REED J CHEY SJ VANNOSTRAND JE CAHILL DG MORKOC H
Citation: M. Tao et al., IMPROVED SI3N4 SI/GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES BY IN-SITU ANNEAL OF THE AS-DEPOSITED SI/, Journal of applied physics, 77(8), 1995, pp. 4113-4115
THERMAL-CONDUCTIVITY OF ALPHA-SIH THIN-FILMS
Authors: CAHILL DG KATIYAR M ABELSON JR
Citation: Dg. Cahill et al., THERMAL-CONDUCTIVITY OF ALPHA-SIH THIN-FILMS, Physical review. B, Condensed matter, 50(9), 1994, pp. 6077-6081
ATOMIC-STRUCTURE OF COBALT SILICIDE ISLANDS FORMED BY REACTIVE EPITAXY
Authors: BENNETT PA PARIKH SA LEE MY CAHILL DG
Citation: Pa. Bennett et al., ATOMIC-STRUCTURE OF COBALT SILICIDE ISLANDS FORMED BY REACTIVE EPITAXY, Surface science, 312(3), 1994, pp. 377-386
INTERSTITIAL PRECURSOR TO SILICIDE FORMATION ON SI(111)-(7X7)
Authors: BENNETT PA CAHILL DG COPEL M
Citation: Pa. Bennett et al., INTERSTITIAL PRECURSOR TO SILICIDE FORMATION ON SI(111)-(7X7), Physical review letters, 73(3), 1994, pp. 452-455
THERMAL-CONDUCTIVITY OF SPUTTERED AND EVAPORATED SIO2 AND TIO2 OPTICAL COATINGS
Authors: CAHILL DG ALLEN TH
Citation: Dg. Cahill et Th. Allen, THERMAL-CONDUCTIVITY OF SPUTTERED AND EVAPORATED SIO2 AND TIO2 OPTICAL COATINGS, Applied physics letters, 65(3), 1994, pp. 309-311
Risultati: 1-25 | 26-34 |