AAAAAA
Results:
1-15
|
Results: 15
Authors:
CALCOTT PDJ
Citation: Pdj. Calcott, THE MECHANISM OF LIGHT-EMISSION FROM POROUS SILICON - WHERE ARE WE 7 YEARS ON, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 132-140
Authors:
CULLIS AG
CANHAM LT
CALCOTT PDJ
Citation: Ag. Cullis et al., THE STRUCTURAL AND LUMINESCENCE PROPERTIES OF POROUS SILICON, Journal of applied physics, 82(3), 1997, pp. 909-965
Authors:
LONI A
SIMONS AJ
CALCOTT PDJ
NEWEY JP
COX TI
CANHAM LT
Citation: A. Loni et al., RELATIONSHIP BETWEEN STORAGE MEDIA AND BLUE PHOTOLUMINESCENCE FOR OXIDIZED POROUS SILICON, Applied physics letters, 71(1), 1997, pp. 107-109
Authors:
CANHAM LT
LONI A
CALCOTT PDJ
SIMONS AJ
REEVES C
HOULTON MR
NEWEY JP
NASH KJ
COX TI
Citation: Lt. Canham et al., ON THE ORIGIN OF BLUE LUMINESCENCE ARISING FROM ATMOSPHERIC IMPREGNATION OF OXIDIZED POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 112-115
Authors:
FREER RW
LANE PA
MARTIN T
WHITEHOUSE CR
WHITAKER TJ
WILLIAMS GM
CULLIS AG
CALCOTT PDJ
NASH KD
BUCHANNAN H
Citation: Rw. Freer et al., CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM, Journal of applied physics, 79(2), 1996, pp. 917-922
Authors:
FREER RW
WHITAKER TJ
MARTIN T
CALCOTT PDJ
HOULTON M
LEE D
JONES AC
RUSHWORTH SA
Citation: Rw. Freer et al., NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM, Advanced materials, 7(5), 1995, pp. 478-481
Authors:
NASH KJ
CALCOTT PDJ
CANHAM LT
NEEDS RJ
Citation: Kj. Nash et al., SPIN-ORBIT INTERACTION, TRIPLET LIFETIME, AND FINE-STRUCTURE SPLITTING OF EXCITONS IN HIGHLY POROUS SILICON, Physical review. B, Condensed matter, 51(24), 1995, pp. 17698-17707
Authors:
SIMONS AJ
COX TI
UREN MJ
CALCOTT PDJ
Citation: Aj. Simons et al., THE ELECTRICAL-PROPERTIES OF POROUS SILICON PRODUCED FROM N(+) SILICON SUBSTRATES, Thin solid films, 255(1-2), 1995, pp. 12-15
Authors:
FREER RW
MARTIN T
LANE PA
WHITEHOUSE CR
WHITAKER TJ
HOULTON M
CALCOTT PDJ
LEE D
RUSHWORTH SA
Citation: Rw. Freer et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES, Journal of crystal growth, 150(1-4), 1995, pp. 539-545
BLUE PHOTOLUMINESCENCE FROM RAPID THERMALLY OXIDIZED POROUS SILICON FOLLOWING STORAGE IN AMBIENT AIR
Authors:
LONI A
SIMONS AJ
CALCOTT PDJ
CANHAM LT
Citation: A. Loni et al., BLUE PHOTOLUMINESCENCE FROM RAPID THERMALLY OXIDIZED POROUS SILICON FOLLOWING STORAGE IN AMBIENT AIR, Journal of applied physics, 77(7), 1995, pp. 3557-3559
Authors:
LONI A
SIMONS AJ
COX TI
CALCOTT PDJ
CANHAM LT
Citation: A. Loni et al., ELECTROLUMINESCENT POROUS SILICON DEVICE WITH AN EXTERNAL QUANTUM EFFICIENCY GREATER-THAN 0.1-PERCENT UNDER CW OPERATION, Electronics Letters, 31(15), 1995, pp. 1288-1289
Authors:
NEEDS RJ
READ AJ
NASH KJ
BHATTARCHARJEE S
OTEISH A
CANHAM LT
CALCOTT PDJ
Citation: Rj. Needs et al., A 1ST-PRINCIPLES STUDY OF THE ELECTRONIC-PROPERTIES OF SILICON QUANTUM WIRES, Physica. A, 207(1-3), 1994, pp. 411-419
Authors:
NASH KJ
CALCOTT PDJ
CANHAM LT
KANE MJ
BRUMHEAD D
Citation: Kj. Nash et al., THE ORIGIN OF EFFICIENT LUMINESCENCE IN HIGHLY POROUS SILICON, Journal of luminescence, 60-1, 1994, pp. 297-301
Authors:
CALCOTT PDJ
NASH KJ
CANHAM LT
KANE MJ
BRUMHEAD D
Citation: Pdj. Calcott et al., SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 257-269
Authors:
EMENY MT
SKOLNICK MS
WHITEHOUSE CR
HAYES DG
CALCOTT PDJ
HIGGS AW
Citation: Mt. Emeny et al., OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/, Applied physics letters, 63(6), 1993, pp. 824-826
Risultati:
1-15
|