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Results:
1-13
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Results: 13
Authors:
VILANOVA X
LLOBET E
BREZMES J
CALDERER J
CORREIG X
Citation: X. Vilanova et al., NUMERICAL-SIMULATION OF THE ELECTRODE GEOMETRY AND POSITION EFFECTS ON SEMICONDUCTOR GAS SENSOR RESPONSE, Sensors and actuators. B, Chemical, 48(1-3), 1998, pp. 425-431
Authors:
GARCIA G
FIGUERAS A
CASADO J
LLIBRE J
MOKCHAH M
PETOTERVAS G
CALDERER J
Citation: G. Garcia et al., YTTRIA-STABILIZED ZIRCONIA OBTAINED BY MOCVD - APPLICATIONS, Thin solid films, 317(1-2), 1998, pp. 241-244
DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 54-61
Authors:
LLOBET E
VILANOVA X
BREZMES J
ALCUBILLA R
CALDERER J
SUEIRAS JE
CORREIG X
Citation: E. Llobet et al., CONDUCTANCE-TRANSIENT ANALYSIS OF THICK-FLINT TIN OXIDE GAS SENSORS UNDER SUCCESSIVE GAS-INJECTION STEPS, Measurement science & technology, 8(10), 1997, pp. 1133-1138
Authors:
MARSAL LF
PALLARES J
CORREIG X
DOMINGUEZ M
BARDES D
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL-PROPERTIES OF PECVD AMORPHOUS SILICON-CARBON ALLOYS FROM AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1555-1558
Authors:
MORENO M
DOMINGUEZ C
MUNOZ J
CALDERER J
MORANTE JR
Citation: M. Moreno et al., PHOTOSENSOR AND OPTICAL-WAVE WIDE COUPLING IN SILICON TECHNOLOGY, Sensors and actuators. A, Physical, 62(1-3), 1997, pp. 524-528
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., SPACE-CHARGE RECOMBINATION IN P-N-JUNCTIONS WITH A DISCRETE AND CONTINUOUS TRAP DISTRIBUTION, Solid-state electronics, 41(1), 1997, pp. 17-23
Authors:
MORENO M
CALDERER J
Citation: M. Moreno et J. Calderer, LATERAL PHOTODETECTORS ON ARROW STRUCTURES FOR OPTICAL INTERCONNECTIONS, Optics communications, 140(1-3), 1997, pp. 27-31
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL MODEL FOR AMORPHOUS CRYSTALLINE HETEROJUNCTION SILICON DIODES (N-A-SI-H/P C-SI)/, Semiconductor science and technology, 11(8), 1996, pp. 1209-1213
Authors:
ELGHRANDI R
CALDERER J
GARRIDO B
PEDROVIEJO JJ
MORANTE JR
Citation: R. Elghrandi et al., LOCAL-STRUCTURE AND OXYGEN ABSORPTION IN A-SI1-XCX (X-LESS-THAN-0-CENTER-DOT-4) ALLOYS GROWN ON SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Materials science and technology, 12(1), 1996, pp. 103-107
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
MORANTE JR
CALDERER J
REUTHER H
SKORUPA W
Citation: A. Perezrodriguez et al., ION-BEAM SYNTHESIS AND RECRYSTALLIZATION OF AMORPHOUS SIGE SIC STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 151-155
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL CHARACTERIZATION OF N-AMORPHOUS P-CRYSTALLINE SILICON HETEROJUNCTIONS/, Journal of applied physics, 79(11), 1996, pp. 8493-8497
Authors:
BENRAKKAD MS
FERRER JC
GARRIDO B
PEDROVIEJO JJ
CALDERER J
MORANTE JR
Citation: Ms. Benrakkad et al., STRUCTURAL-ANALYSIS OF THERMALLY OXIDIZED AMORPHOUS SI1-XGEX LAYERS, Microelectronic engineering, 28(1-4), 1995, pp. 225-228
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