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PALATINI P
COLANGELI G
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MALIK R
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Citation: G. Meneghesso et al., EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1411-1413
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CANALI C
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Citation: A. Castaldini et al., BIAS DEPENDENCE OF THE DEPLETION LAYER WIDTH IN SEMIINSULATING GAAS BY CHARGE COLLECTION SCANNING MICROSCOPY, Scanning microscopy, 8(4), 1994, pp. 969-978
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MALIK R
NEVIANI A
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ZANONI E
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MASTRAPASQUA M
CANALI C
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MANFREDI M
ZANONI E
SIVCO DL
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Citation: C. Tedesco et al., IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS, IEEE electron device letters, 15(10), 1994, pp. 377-379