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Results: 1-25 | 26-27
Results: 1-25/27
BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF BARRIER HEIGHT INHOMOGENEITIES INTRODUCED IN AU N-SI SCHOTTKY CONTACTS BY A HF PRETREATMENT/
Authors: DETAVERNIER C VANMEIRHAEGHE RL DONATON R MAEX K CARDON F
Citation: C. Detavernier et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF BARRIER HEIGHT INHOMOGENEITIES INTRODUCED IN AU N-SI SCHOTTKY CONTACTS BY A HF PRETREATMENT/, Journal of applied physics, 84(6), 1998, pp. 3226-3231
A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY BARRIERS DUE TO REACTIVE ION ETCHING/
Authors: VANALME GM VANMEIRHAEGHE RL CARDON F VANDAELE P
Citation: Gm. Vanalme et al., A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY BARRIERS DUE TO REACTIVE ION ETCHING/, Semiconductor science and technology, 12(7), 1997, pp. 907-912
POSSIBILITIES AND LIMITATIONS OF BLUE ELECTROLUMINESCENCE IN CAS-PB2-FILMS( THIN)
Authors: POELMAN D VANMEIRHAEGHE RL VERMEERSCH BA CARDON F
Citation: D. Poelman et al., POSSIBILITIES AND LIMITATIONS OF BLUE ELECTROLUMINESCENCE IN CAS-PB2-FILMS( THIN), Journal of physics. D, Applied physics, 30(3), 1997, pp. 465-467
INFLUENCE OF THE GROWTH-CONDITIONS ON THE PROPERTIES OF CAS-EU ELECTROLUMINESCENT THIN-FILMS
Authors: POELMAN D VERCAEMST R VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: D. Poelman et al., INFLUENCE OF THE GROWTH-CONDITIONS ON THE PROPERTIES OF CAS-EU ELECTROLUMINESCENT THIN-FILMS, Journal of luminescence, 75(2), 1997, pp. 175-181
A STUDY OF ELECTRICALLY ACTIVE DEFECTS CREATED IN P-INP BY CH4-H-2 REACTIVE ION ETCHING
Authors: GOUBERT L VANMEIRHAEGHE RL CLAUWS P CARDON F VANDAELE P
Citation: L. Goubert et al., A STUDY OF ELECTRICALLY ACTIVE DEFECTS CREATED IN P-INP BY CH4-H-2 REACTIVE ION ETCHING, Journal of applied physics, 82(4), 1997, pp. 1696-1699
ELECTROCHEMICAL REDUCTION VS, VAPOR-DEPOSITION FOR N-GAAS CU SCHOTTKY-BARRIER FORMATION - A COMPARATIVE-STUDY/
Authors: VEREECKEN PM VANALME GM VANMEIRHAEGHE RL CARDON F GOMES WP
Citation: Pm. Vereecken et al., ELECTROCHEMICAL REDUCTION VS, VAPOR-DEPOSITION FOR N-GAAS CU SCHOTTKY-BARRIER FORMATION - A COMPARATIVE-STUDY/, Journal of the Chemical Society. Faraday transactions, 92(20), 1996, pp. 4069-4075
QUANTITATIVE PREDICTION OF ACCEPTOR CONCENTRATION REDUCTION IN BORON-DOPED SILICON DUE TO ELECTRON-IRRADIATION
Authors: EVERAERT JL VERHAEGEN F VANMEIRHAEGHE RL UYTTENHOVE J CARDON F
Citation: Jl. Everaert et al., QUANTITATIVE PREDICTION OF ACCEPTOR CONCENTRATION REDUCTION IN BORON-DOPED SILICON DUE TO ELECTRON-IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(4), 1996, pp. 397-402
TRANSIENT MICROWAVE PHOTOCONDUCTIVITY AND COMPUTER-SIMULATION STUDY OF IR3-DOPED AND RH3+-DOPED AGCL MICROCRYSTALS()
Authors: VANDENEEDEN M CALLENS F CARDON F VANDENBROUCKE D DEKEYZER R
Citation: M. Vandeneeden et al., TRANSIENT MICROWAVE PHOTOCONDUCTIVITY AND COMPUTER-SIMULATION STUDY OF IR3-DOPED AND RH3+-DOPED AGCL MICROCRYSTALS(), Journal of imaging science and technology, 39(5), 1995, pp. 393-402
A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3
Authors: VERCAEMST R POELMAN D FIERMANS L VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: R. Vercaemst et al., A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3, Journal of electron spectroscopy and related phenomena, 74(1), 1995, pp. 45-56
A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING/
Authors: EVERAERT JL VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: Jl. Everaert et al., A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING/, Semiconductor science and technology, 10(4), 1995, pp. 504-508
HYDROGEN PASSIVATION CAUSED BY SOFT SPUTTER ETCH CLEANING OF SI
Authors: VERCAEMST AS VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: As. Vercaemst et al., HYDROGEN PASSIVATION CAUSED BY SOFT SPUTTER ETCH CLEANING OF SI, Solid-state electronics, 38(5), 1995, pp. 983-987
A METHOD FOR EVALUATING THE FREQUENCY-CHARACTERISTICS OF AC THIN-FILMELECTROLUMINESCENT DEVICES
Authors: WANG ZX CARDON F
Citation: Zx. Wang et F. Cardon, A METHOD FOR EVALUATING THE FREQUENCY-CHARACTERISTICS OF AC THIN-FILMELECTROLUMINESCENT DEVICES, Journal of physics. D, Applied physics, 28(10), 1995, pp. 2144-2149
THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES
Authors: POELMAN D VERCAEMST R VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: D. Poelman et al., THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES, Journal of luminescence, 65(1), 1995, pp. 7-10
AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES
Authors: VERCAEMST R POELMAN D VANMEIRHAEGHE RL FIERMANS L LAFLERE WH CARDON F
Citation: R. Vercaemst et al., AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES, Journal of luminescence, 63(1-2), 1995, pp. 19-30
ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/
Authors: LAUWERS A LARSEN KK VANHOVE M VERBEECK R MAEX K VANROSSUM M VERCAEMST A VANMEIRHAEGHE R CARDON F
Citation: A. Lauwers et al., ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/, Journal of applied physics, 77(6), 1995, pp. 2525-2536
OCCURRENCE OF MULTIPLE DIELECTRIC-LOSS CURVES FOR SILVER-HALIDE EMULSIONS - DIFFICULTIES OF INTERPRETATION
Authors: CALLENS F VANDENBROUCKE D SOENS L CARDON F
Citation: F. Callens et al., OCCURRENCE OF MULTIPLE DIELECTRIC-LOSS CURVES FOR SILVER-HALIDE EMULSIONS - DIFFICULTIES OF INTERPRETATION, Journal of applied physics, 77(11), 1995, pp. 5869-5881
COMPUTER-SIMULATION OF TRANSIENT MICROWAVE PHOTOCONDUCTIVITY IN SILVER-HALIDE MICROCRYSTALS
Authors: VANDENEEDEN M CALLENS F DEROOSE A CARDON F
Citation: M. Vandeneeden et al., COMPUTER-SIMULATION OF TRANSIENT MICROWAVE PHOTOCONDUCTIVITY IN SILVER-HALIDE MICROCRYSTALS, Journal of imaging science and technology, 38(5), 1994, pp. 475-483
ELECTRICAL CHARACTERISTICS OF AL SIO2/N-SI TUNNEL-DIODES WITH AN OXIDE LAYER GROWN BY RAPID THERMAL-OXIDATION/
Authors: DEPAS M VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: M. Depas et al., ELECTRICAL CHARACTERISTICS OF AL SIO2/N-SI TUNNEL-DIODES WITH AN OXIDE LAYER GROWN BY RAPID THERMAL-OXIDATION/, Solid-state electronics, 37(3), 1994, pp. 433-441
XPS STUDY OF TBF3 AND TBOF CENTERS IN ZNS
Authors: VANDENBOSSCHE J NEYTS KA DEVISSCHERE P CORLATAN D PAUWELS H VERCAEMST R FIERMANS L POELMAN D VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: J. Vandenbossche et al., XPS STUDY OF TBF3 AND TBOF CENTERS IN ZNS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 67-70
INFLUENCE OF DEFECT PASSIVATION BY HYDROGEN ON THE SCHOTTKY-BARRIER HEIGHT OF GAAS AND INP CONTACTS
Authors: VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: Rl. Vanmeirhaeghe et al., INFLUENCE OF DEFECT PASSIVATION BY HYDROGEN ON THE SCHOTTKY-BARRIER HEIGHT OF GAAS AND INP CONTACTS, Journal of applied physics, 76(1), 1994, pp. 403-406
EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES
Authors: POELMAN D VERCAEMST R VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: D. Poelman et al., EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES, JPN J A P 1, 32(8), 1993, pp. 3477-3480
TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION
Authors: DEPAS M VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: M. Depas et al., TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION, Microelectronic engineering, 22(1-4), 1993, pp. 61-64
DETERMINATION OF THE CONCENTRATION OF INTERSTITIAL SILVER IONS IN SILVER-HALIDE EMULSION GRAINS BY MEANS OF DIELECTRIC-LOSS MEASUREMENTS - DIFFICULTIES OF INTERPRETATION
Authors: CALLENS F VANDENBROUCKE D SOENS L VANDENEEDEN M CARDON F
Citation: F. Callens et al., DETERMINATION OF THE CONCENTRATION OF INTERSTITIAL SILVER IONS IN SILVER-HALIDE EMULSION GRAINS BY MEANS OF DIELECTRIC-LOSS MEASUREMENTS - DIFFICULTIES OF INTERPRETATION, Journal of Photographic Science, 41(3), 1993, pp. 72-73
ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL N-GAAS CONTACTS/
Authors: VANDEWALLE R VANMEIRHAEGHE RL LAFLERE WH CARDON F
Citation: R. Vandewalle et al., ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL N-GAAS CONTACTS/, Journal of applied physics, 74(3), 1993, pp. 1885-1889
RECOMBINATION IN SEMICONDUCTOR ELECTRODES - INVESTIGATION BY THE ELECTRICAL AND OPTOELECTRICAL IMPEDANCE METHOD
Authors: VANMAEKELBERGH D DEWIT AR CARDON F
Citation: D. Vanmaekelbergh et al., RECOMBINATION IN SEMICONDUCTOR ELECTRODES - INVESTIGATION BY THE ELECTRICAL AND OPTOELECTRICAL IMPEDANCE METHOD, Journal of applied physics, 73(10), 1993, pp. 5049-5057
Risultati: 1-25 | 26-27