Authors:
DOOLITTLE WA
KROPEWNICKI T
CARTERCOMAN C
STOCK S
KOHL P
JOKERST NM
METZGER RA
KANG S
LEE KK
MAY G
BROWN AS
Citation: Wa. Doolittle et al., GROWTH OF GAN ON LITHIUM GALLATE SUBSTRATES FOR DEVELOPMENT OF A GAN THIN COMPLIANT SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1300-1304
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BENZ RG
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF GAAS SUBSTRATE REMOVAL ETCHING WITH CITRIC ACID-H2O2 AND NH4OH-H2O2 FOR APPLICATION TO COMPLIANT SUBSTRATES, Journal of the Electrochemical Society, 144(2), 1997, pp. 29-31
Authors:
CARTERCOMAN C
BROWN AS
METZGER RA
JOKERST NM
PICKERING J
BOTTOMLEY LA
Citation: C. Cartercoman et al., A NEW MECHANISM FOR SPONTANEOUS NANOSTRUCTURE FORMATION ON BOTTOM-PATTERNED COMPLIANT SUBSTRATES, Applied physics letters, 71(19), 1997, pp. 2773-2775
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., METASTABILITY MODELING OF COMPLIANT SUBSTRATE CRITICAL THICKNESS USING EXPERIMENTAL STRAIN RELIEF DATA, Applied physics letters, 71(10), 1997, pp. 1344-1346
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF IN0.07GA0.93AS LAYERS ON GAAS COMPLIANT SUBSTRATES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Applied physics letters, 70(13), 1997, pp. 1754-1756
Authors:
CARTERCOMAN C
BROWN AS
BICKNELLTASSIUS R
JOKERST NM
FOURNIER F
DAWSON DE
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - MODIFICATION OF GROWTH-KINETICS VIA PATTERNED, COMPLIANT SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2170-2174
Authors:
CARTERCOMAN C
BROWN AS
JOKERST NM
DAWSON DE
BICKNELLTASSIUS R
FENG ZC
RAJKUMAR KC
DAGNALL G
Citation: C. Cartercoman et al., STRAIN ACCOMMODATION IN MISMATCHED LAYERS BY MOLECULAR-BEAM EPITAXY -INTRODUCTION OF A NEW COMPLIANT SUBSTRATE TECHNOLOGY, Journal of electronic materials, 25(7), 1996, pp. 1044-1048
Authors:
CARTERCOMAN C
BROWN AS
BICKNELLTASSIUS R
JOKERST NM
ALLEN M
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - A FLEXIBLE APPROACH TO 3-D BAND-STRUCTURE ENGINEERING WITHOUT SURFACE PATTERNING, Applied physics letters, 69(2), 1996, pp. 257-259