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Results: 1-11 |
Results: 11

Authors: DOOLITTLE WA KROPEWNICKI T CARTERCOMAN C STOCK S KOHL P JOKERST NM METZGER RA KANG S LEE KK MAY G BROWN AS
Citation: Wa. Doolittle et al., GROWTH OF GAN ON LITHIUM GALLATE SUBSTRATES FOR DEVELOPMENT OF A GAN THIN COMPLIANT SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1300-1304

Authors: HOFLER GE CARTERCOMAN C KRAMES MR GARDNER NF KISH FA TAN TS LOH B POSSELT J COLLINS D SASSER G
Citation: Ge. Hofler et al., HIGH-FLUX HIGH-EFFICIENCY TRANSPARENT-SUBSTRATE ALGAINP GAP LIGHT-EMITTING-DIODES/, Electronics Letters, 34(18), 1998, pp. 1781-1782

Authors: KROPEWNICKI TJ DOOLITTLE WA CARTERCOMAN C KANG S KOHL PA JOKERST NM BROWN AS
Citation: Tj. Kropewnicki et al., SELECTIVE WET ETCHING OF LITHIUM GALLATE, Journal of the Electrochemical Society, 145(5), 1998, pp. 88-90

Authors: FOURNIER F METZGER RA DOOLITTLE A BROWN AS CARTERCOMAN C JOKERST NM BICKNELLTASSIUS R
Citation: F. Fournier et al., GROWTH DYNAMICS OF INGAAS GAAS BY MBE, Journal of crystal growth, 175, 1997, pp. 203-210

Authors: CARTERCOMAN C BICKNELLTASSIUS R BENZ RG BROWN AS JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF GAAS SUBSTRATE REMOVAL ETCHING WITH CITRIC ACID-H2O2 AND NH4OH-H2O2 FOR APPLICATION TO COMPLIANT SUBSTRATES, Journal of the Electrochemical Society, 144(2), 1997, pp. 29-31

Authors: CARTERCOMAN C BROWN AS METZGER RA JOKERST NM PICKERING J BOTTOMLEY LA
Citation: C. Cartercoman et al., A NEW MECHANISM FOR SPONTANEOUS NANOSTRUCTURE FORMATION ON BOTTOM-PATTERNED COMPLIANT SUBSTRATES, Applied physics letters, 71(19), 1997, pp. 2773-2775

Authors: CARTERCOMAN C BICKNELLTASSIUS R BROWN AS JOKERST NM
Citation: C. Cartercoman et al., METASTABILITY MODELING OF COMPLIANT SUBSTRATE CRITICAL THICKNESS USING EXPERIMENTAL STRAIN RELIEF DATA, Applied physics letters, 71(10), 1997, pp. 1344-1346

Authors: CARTERCOMAN C BICKNELLTASSIUS R BROWN AS JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF IN0.07GA0.93AS LAYERS ON GAAS COMPLIANT SUBSTRATES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Applied physics letters, 70(13), 1997, pp. 1754-1756

Authors: CARTERCOMAN C BROWN AS BICKNELLTASSIUS R JOKERST NM FOURNIER F DAWSON DE
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - MODIFICATION OF GROWTH-KINETICS VIA PATTERNED, COMPLIANT SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2170-2174

Authors: CARTERCOMAN C BROWN AS JOKERST NM DAWSON DE BICKNELLTASSIUS R FENG ZC RAJKUMAR KC DAGNALL G
Citation: C. Cartercoman et al., STRAIN ACCOMMODATION IN MISMATCHED LAYERS BY MOLECULAR-BEAM EPITAXY -INTRODUCTION OF A NEW COMPLIANT SUBSTRATE TECHNOLOGY, Journal of electronic materials, 25(7), 1996, pp. 1044-1048

Authors: CARTERCOMAN C BROWN AS BICKNELLTASSIUS R JOKERST NM ALLEN M
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - A FLEXIBLE APPROACH TO 3-D BAND-STRUCTURE ENGINEERING WITHOUT SURFACE PATTERNING, Applied physics letters, 69(2), 1996, pp. 257-259
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