Authors:
HAMP MJ
CASSIDY DT
ROBINSON BJ
ZHAO QC
THOMPSON DA
DAVIES M
Citation: Mj. Hamp et al., EFFECT OF BARRIER HEIGHT ON THE UNEVEN CARRIER DISTRIBUTION IN ASYMMETRIC MULTIPLE-QUANTUM-WELL INGAASP LASERS, IEEE photonics technology letters, 10(10), 1998, pp. 1380-1382
Citation: X. Zhu et Dt. Cassidy, MODULATION SPECTROSCOPY WITH A SEMICONDUCTOR DIODE-LASER BY INJECTION-CURRENT MODULATION, Journal of the Optical Society of America. B, Optical physics, 14(8), 1997, pp. 1945-1950
Citation: A. Gupta et al., CHARACTERIZATION AND MODELING OF THE STRAIN FIELDS ASSOCIATED WITH INGAAS LAYERS ON V-GROOVED INP SUBSTRATES, Journal of applied physics, 82(12), 1997, pp. 6016-6023
Authors:
LAKSHMI B
ROBINSON BJ
CASSIDY DT
THOMPSON DA
Citation: B. Lakshmi et al., ANISOTROPIC INTERFACIAL STRAIN IN INP INGAAS/INP QUANTUM-WELLS STUDIED USING DEGREE OF POLARIZATION OF PHOTOLUMINESCENCE/, Journal of applied physics, 81(8), 1997, pp. 3616-3620
Citation: B. Lakshmi et al., QUANTUM-WELL STRAIN AND THICKNESS CHARACTERIZATION BY DEGREE OF POLARIZATION, Journal of applied physics, 79(10), 1996, pp. 7640-7645
Citation: Dm. Adams et al., SCANNING PHOTOLUMINESCENCE TECHNIQUE TO DETERMINE THE PHASE OF THE GRATING AT THE FACETS OF GAIN-COUPLED DFBS, IEEE journal of quantum electronics, 32(7), 1996, pp. 1237-1242
Citation: Xa. Zhu et Dt. Cassidy, LIQUID DETECTION WITH INGAASP SEMICONDUCTOR-LASERS HAVING MULTIPLE SHORT EXTERNAL CAVITIES, Applied optics, 35(24), 1996, pp. 4689-4693
Authors:
YANG J
ELENKRIG BB
CASSIDY DT
BRUCE DM
TEMPLETON IM
Citation: J. Yang et al., APPLICATION OF POLARIZATION RESOLVED PHOTOLUMINESCENCE TO THE STUDY OF QUANTUM-WELL INTERMIXING IN INGAASP SYSTEMS (VOL 10, PG 483, 1995), Semiconductor science and technology, 10(6), 1995, pp. 886-886
Authors:
YANG JA
ELENKRIG BB
CASSIDY DT
BRUCE DM
TEMPLETON IM
Citation: Ja. Yang et al., APPLICATION OF POLARIZATION RESOLVED PHOTOLUMINESCENCE TO THE STUDY OF QUANTUM-WELL INTERMIXING IN INGAASP SYSTEMS, Semiconductor science and technology, 10(4), 1995, pp. 483-488
Citation: A. Nguyen et Dt. Cassidy, FLEXURE-MOUNTED EXTERNAL-CAVITY FOR SINGLE-MODE OPERATION OF SEMICONDUCTOR DIODE-LASERS, Review of scientific instruments, 66(9), 1995, pp. 4458-4460
Citation: Ja. Yang et Dt. Cassidy, CORRELATION BETWEEN STRAIN FIELDS ON THE FACET AND ALONG THE CAVITY IN SEMICONDUCTOR DIODE-LASERS, Journal of applied physics, 77(8), 1995, pp. 3762-3765
Citation: J. Yang et Dt. Cassidy, STRAIN-MEASUREMENT AND ESTIMATION OF PHOTOELASTIC EFFECTS AND STRAIN-INDUCED OPTICAL GAIN CHANGE IN RIDGE-WAVE-GUIDE LASERS, Journal of applied physics, 77(7), 1995, pp. 3382-3387
Citation: J. Yang et Dt. Cassidy, TECHNIQUE FOR MAPPING THE SPECTRAL UNIFORMITY OF LUMINESCENT SEMICONDUCTING MATERIAL, Applied optics, 34(22), 1995, pp. 4794-4799
Authors:
KIM HK
KLEEMEIER W
LI YB
LANGER DW
CASSIDY DT
BRUCE DM
Citation: Hk. Kim et al., THIN-FILM INDUCED STRESS IN GAAS RIDGE-WAVE-GUIDE STRUCTURES INTEGRATED WITH SPUTTER-DEPOSITED ZNO FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1328-1332
Citation: Je. Hayward et Dt. Cassidy, NONLINEAR GAIN AND THE SPECTRAL OUTPUT OF SHORT-EXTERNAL-CAVITY 1.3 MU-M INGAASP SEMICONDUCTOR DIODE-LASERS, IEEE journal of quantum electronics, 30(9), 1994, pp. 2043-2050
Citation: Je. Hayward et Dt. Cassidy, CORRELATION BETWEEN EXPERIMENTS TO MEASURE SCATTERING CENTERS IN 1.3-MU-M SEMICONDUCTOR DIODE-LASERS, IEEE journal of quantum electronics, 29(7), 1993, pp. 2173-2177
Citation: Bf. Ventrudo et Dt. Cassidy, INTERFERENCE-FRINGES IN THE FAR-FIELD OF SHORT-EXTERNAL-CAVITY INGAASP DIODE-LASERS - A METHOD FOR LONGITUDINAL MODE CONTROL, Applied optics, 32(33), 1993, pp. 6620-6627
Citation: Pd. Colbourne et Dt. Cassidy, DISLOCATION DETECTION USING POLARIZATION-RESOLVED PHOTOLUMINESCENCE, Canadian journal of physics, 70(10-11), 1992, pp. 803-812