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Results: 1-13 |
Results: 13
ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R PELAEZ R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS, Semiconductor science and technology, 13(4), 1998, pp. 389-393
DEPOSITION OF SINX-H THIN-FILMS BY THE ELECTRON-CYCLOTRON-RESONANCE AND ITS APPLICATION TO AL SINX-H/SI STRUCTURES/
Authors: GARCIA S MARTIL I DIAZ GG CASTAN E DUENAS S FERNANDEZ M
Citation: S. Garcia et al., DEPOSITION OF SINX-H THIN-FILMS BY THE ELECTRON-CYCLOTRON-RESONANCE AND ITS APPLICATION TO AL SINX-H/SI STRUCTURES/, Journal of applied physics, 83(1), 1998, pp. 332-338
GOOD QUALITY AL SINX-H/INP METAL-INSULATOR-SEMICONDUCTOR DEVICES OBTAINED WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD/
Authors: GARCIA S MARTIL I DIAZ GG CASTAN E DUENAS S FERNANDEZ M
Citation: S. Garcia et al., GOOD QUALITY AL SINX-H/INP METAL-INSULATOR-SEMICONDUCTOR DEVICES OBTAINED WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD/, Journal of applied physics, 83(1), 1998, pp. 600-603
THERMAL EMISSION PROCESSES OF DX CENTERS IN ALXGA1-XAS-SI
Authors: ENRIQUEZ L DUENAS S CASTAN E QUINTANILLA L PINACHO R BARBOLLA J
Citation: L. Enriquez et al., THERMAL EMISSION PROCESSES OF DX CENTERS IN ALXGA1-XAS-SI, Solid-state electronics, 41(1), 1997, pp. 103-109
EFFECTS OF EXCITATORY AMINO-ACIDS ON NEUROMUSCULAR DEVELOPMENT IN THECHICK-EMBRYO
Authors: CALDERO J CIUTAT D LLADO J CASTAN E OPPENHEIM RW ESQUERDA JE
Citation: J. Caldero et al., EFFECTS OF EXCITATORY AMINO-ACIDS ON NEUROMUSCULAR DEVELOPMENT IN THECHICK-EMBRYO, Journal of comparative neurology, 387(1), 1997, pp. 73-95
DETAILED ELECTRICAL CHARACTERIZATION OF DX CENTERS IN SE-DOPED ALXGA1-XAS
Authors: DUENAS S PINACHO R CASTAN E QUINTANILLA L PELAEZ R BARBOLLA J
Citation: S. Duenas et al., DETAILED ELECTRICAL CHARACTERIZATION OF DX CENTERS IN SE-DOPED ALXGA1-XAS, Journal of applied physics, 82(9), 1997, pp. 4338-4345
DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/, Journal of applied physics, 81(7), 1997, pp. 3143-3150
EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/
Authors: DUENAS S PELAEZ R CASTAN E PINACHO R QUINTANILLA L BARBOLLA J MARTIL I GONZALEZDIAZ G
Citation: S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828
DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS
Authors: QUINTANILA L DUENAS S CASTAN E PINACHO R PELAZ L BAILON L BARBOLLA J
Citation: L. Quintanila et al., DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS, Journal of applied physics, 79(1), 1996, pp. 310-315
ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS
Authors: DUENAS S CASTAN E QUINTANILLA L ENRIQUEZ L BARBOLLA J LORATAMAYO E MONTSERRAT J
Citation: S. Duenas et al., ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS, Materials science and technology, 11(10), 1995, pp. 1074-1078
DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP
Authors: MARTIN JM GARCIA S MARTIL I GONZALEZDIAZ G CASTAN E DUENAS S
Citation: Jm. Martin et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP, Journal of applied physics, 78(9), 1995, pp. 5325-5330
CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE
Authors: DUENAS S CASTAN E ENRIQUEZ L BARBOLLA J MONTSERRAT J LORATAMAYO E
Citation: S. Duenas et al., CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE, Semiconductor science and technology, 9(9), 1994, pp. 1637-1648
ELECTRICAL CHARACTERIZATION OF MOS STRUCTURES FABRICATED ON SF6 AND SF6+C2CIF5 REACTIVE ION ETCHED SILICON
Authors: CASTAN E VICENTE J BARBOLLA J CABRUJA E LORATAMAYO E
Citation: E. Castan et al., ELECTRICAL CHARACTERIZATION OF MOS STRUCTURES FABRICATED ON SF6 AND SF6+C2CIF5 REACTIVE ION ETCHED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1362-1366
Risultati: 1-13 |