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Results:
1-7
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Results: 7
Authors:
CHERTOUK M
BURKNER S
BACHEM K
PLETSCHEN W
KRAUS S
BRAUNSTEIN J
TRANKLE G
Citation: M. Chertouk et al., ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/, Electronics Letters, 34(6), 1998, pp. 590-592
Authors:
DAMMANN M
CHERTOUK M
JANTZ W
KOHLER K
SCHMIDT KH
WEIMANN G
Citation: M. Dammann et al., EFFECT OF ATMOSPHERE ON RELIABILITY OF PASSIVATED 0.15 MU-M INALAS INGAAS HEMTS/, Electronics Letters, 34(21), 1998, pp. 2064-2066
Authors:
CHERTOUK M
STEINHAGEN F
MASSLER H
HAYDL WH
KOHLER K
WEIMANN G
Citation: M. Chertouk et al., OPTIMIZED GATE-DRAIN FEEDBACK CAPACITANCE OF W-BAND HIGH-GAIN PASSIVATED 0.15-MU-M INALAS INGAAS HEMTS/, Electronics Letters, 34(17), 1998, pp. 1703-1705
Authors:
CHERTOUK M
HEISS H
XU D
KRAUS S
KLEIN W
BOHM G
TRANKLE G
WEIMANN G
Citation: M. Chertouk et al., METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH COMPOSITE CHANNELS AND 350-GHZ F(MAX) WITH 160-GHZ F(T)/, Microwave and optical technology letters, 11(3), 1996, pp. 145-147
Authors:
CHERTOUK M
HEISS H
XU D
KRAUS S
KLEIN W
BOHM G
TRANKLE G
WEIMANN G
Citation: M. Chertouk et al., METAMORPHIC INALAS INGAAS HEMTS ON GAAS SUBSTRATES WITH A NOVEL COMPOSITE CHANNELS DESIGN/, IEEE electron device letters, 17(6), 1996, pp. 273-275
Authors:
CHERTOUK M
CHOVET A
Citation: M. Chertouk et A. Chovet, ORIGINS AND CHARACTERIZATION OF LOW-FREQUENCY NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 123-129
Authors:
CHERTOUK M
BOUDIAF A
CHOVET A
AZOULAY R
CLEI A
Citation: M. Chertouk et al., INFLUENCE OF GAAS BUFFER THICKNESS ON LOW-FREQUENCY AND MICROWAVE NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, Electronics Letters, 29(4), 1993, pp. 382-384
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1-7
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