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Results: 1-25 | 26-35
Results: 1-25/35
MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS FILMS ONTHIN SI SUBSTRATES
Authors: MAEHASHI K NAKASHIMA H BERTRAM F VEIT P CHRISTEN J
Citation: K. Maehashi et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS FILMS ONTHIN SI SUBSTRATES, JPN J A P 1, 37(1), 1998, pp. 39-44
EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE
Authors: NAKASHIMA H KATO T MAEHASHI K NISHIDA T INOUE Y TAKEUCHI T INOUE K FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 229-232
ON THE ORIGIN OF BLUE-LIGHT EMISSION FROM GE-NANOCRYSTALS CONTAINING A-SIOX FILMS
Authors: WEIGAND R ZACHARIAS M BLASING J VEIT P CHRISTEN J WENDLER E
Citation: R. Weigand et al., ON THE ORIGIN OF BLUE-LIGHT EMISSION FROM GE-NANOCRYSTALS CONTAINING A-SIOX FILMS, Superlattices and microstructures, 23(2), 1998, pp. 349-354
EXCITONS AND PHONONS IN GAN - MAGNETOOPTICAL AND SPATIALLY-RESOLVED INVESTIGATIONS
Authors: HOFFMANN A ECKEY L SIEGLE H KASCHNER A CHRISTEN J BERTRAM F LIU QKK
Citation: A. Hoffmann et al., EXCITONS AND PHONONS IN GAN - MAGNETOOPTICAL AND SPATIALLY-RESOLVED INVESTIGATIONS, Acta Physica Polonica. A, 94(2), 1998, pp. 125-137
OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BOTTCHER T EINFELDT S FIGGE S KIRCHNER V HOMMEL D SELKE H RYDER PL BERTRAM F RIEMANN T CHRISTEN J LUNZ U BECKER CR
Citation: T. Bottcher et al., OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 94(2), 1998, pp. 260-264
ON THE NATURE OF THE 3.41 EV LUMINESCENCE IN HEXAGONAL GAN
Authors: FISCHER S STEUDE G HOFMANN DM KURTH F ANDERS F TOPF M MEYER BK BERTRAM F SCHMIDT M CHRISTEN J ECKEY L HOLST J HOFFMANN A MENSCHING B RAUSCHENBACH B
Citation: S. Fischer et al., ON THE NATURE OF THE 3.41 EV LUMINESCENCE IN HEXAGONAL GAN, Journal of crystal growth, 190, 1998, pp. 556-560
LOCAL STRAIN DISTRIBUTION OF HEXAGONAL GAN PYRAMIDS
Authors: HOFFMANN A SIEGLE H KASCHNER A ECKEY L THOMSEN C CHRISTEN J BERTRAM F SCHMIDT M HIRAMATSU K KITAMURA S SAWAKI N
Citation: A. Hoffmann et al., LOCAL STRAIN DISTRIBUTION OF HEXAGONAL GAN PYRAMIDS, Journal of crystal growth, 190, 1998, pp. 630-633
ANALYSIS OF DEEP TRAPS IN HEXAGONAL MOLECULAR-BEAM EPITAXY-GROWN GAN BY ADMITTANCE SPECTROSCOPY
Authors: KRTSCHIL A WITTE H LISKER M CHRISTEN J BIRKLE U EINFELDT S HOMMEL D
Citation: A. Krtschil et al., ANALYSIS OF DEEP TRAPS IN HEXAGONAL MOLECULAR-BEAM EPITAXY-GROWN GAN BY ADMITTANCE SPECTROSCOPY, Journal of applied physics, 84(4), 1998, pp. 2040-2043
STRONG MORPHOLOGICAL DEPENDENCE OF LUMINESCENCE EFFICIENCY AND EMISSION WAVELENGTH IN HEXAGONAL GAN CRYSTALLITES DIRECTLY IMAGED BY SCANNING CATHODOLUMINESCENCE MICROSCOPY
Authors: BERTRAM F CHRISTEN J SCHMIDT M TOPF M KOYMOV S FISCHER S MEYER B
Citation: F. Bertram et al., STRONG MORPHOLOGICAL DEPENDENCE OF LUMINESCENCE EFFICIENCY AND EMISSION WAVELENGTH IN HEXAGONAL GAN CRYSTALLITES DIRECTLY IMAGED BY SCANNING CATHODOLUMINESCENCE MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 165-169
SPATIALLY-RESOLVED INVESTIGATIONS OF THE EXCITONIC LUMINESCENCE IN GAN
Authors: HOFFMANN A CHRISTEN J SIEGLE H BERTRAM F SCHMIDT D ECKEY L THOMSEN C HIRAMATSU K
Citation: A. Hoffmann et al., SPATIALLY-RESOLVED INVESTIGATIONS OF THE EXCITONIC LUMINESCENCE IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 192-196
ELECTRICAL AND OPTICAL-PROPERTIES OF P-SIC N-GAN HETEROSTRUCTURES/
Authors: TOPF M MEISTER D DIRNSTORFER I STEUDE G FISCHER S MEYER BK KRTSCHIL A WITTE H CHRISTEN J KAMPEN TU MONCH W
Citation: M. Topf et al., ELECTRICAL AND OPTICAL-PROPERTIES OF P-SIC N-GAN HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 302-306
PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION OF ALGAAS GAAS QUANTUM-WELLS WITH GROWTH-INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: NAKASHIMA H TAKEUCHI T INOUE K FUKUNAGA T BIMBERG D CHRISTEN J
Citation: H. Nakashima et al., PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION OF ALGAAS GAAS QUANTUM-WELLS WITH GROWTH-INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY/, Superlattices and microstructures, 22(4), 1997, pp. 511-515
UNIFORM GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY 2-STEP MBE GROWTH
Authors: TAKEUCHI M TAKEUCHI T INOUE Y KATO T INOUE K NAKASHIMA H MAEHASHI K FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation: M. Takeuchi et al., UNIFORM GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY 2-STEP MBE GROWTH, Superlattices and microstructures, 22(1), 1997, pp. 43-49
SELF-ORGANIZATION PHENOMENA OF INGAAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: HEINRICHSDORFF F KROST A GRUNDMANN M BIMBERG D BERTRAM F CHRISTEN J KOSOGOV A WERNER P
Citation: F. Heinrichsdorff et al., SELF-ORGANIZATION PHENOMENA OF INGAAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of crystal growth, 170(1-4), 1997, pp. 568-573
A COMPARATIVE-STUDY OF GE NANOCRYSTALS IN SIXGEYOZ ALLOYS AND SIOX GEOY MULTILAYERS/
Authors: ZACHARIAS M WEIGAND R DIETRICH B STOLZE F BLASING J VEIT P DRUSEDAU T CHRISTEN J
Citation: M. Zacharias et al., A COMPARATIVE-STUDY OF GE NANOCRYSTALS IN SIXGEYOZ ALLOYS AND SIOX GEOY MULTILAYERS/, Journal of applied physics, 81(5), 1997, pp. 2384-2390
VERTICAL STRAIN AND DOPING GRADIENTS IN THICK GAN LAYERS
Authors: SIEGLE H HOFFMANN A ECKEY L THOMSEN C CHRISTEN J BERTRAM F SCHMIDT D RUDLOFF D HIRAMATSU K
Citation: H. Siegle et al., VERTICAL STRAIN AND DOPING GRADIENTS IN THICK GAN LAYERS, Applied physics letters, 71(17), 1997, pp. 2490-2492
SIZE-DEPENDENT LUMINESCENCE OF GAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS FORMED BY MBE
Authors: NAKASHIMA H TAKEUCHI M INOUE K TAKEUCHI T INOUE Y FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., SIZE-DEPENDENT LUMINESCENCE OF GAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS FORMED BY MBE, Physica. B, Condensed matter, 227(1-4), 1996, pp. 291-294
FORMATION OF GE NANOCRYSTALS IN AMORPHOUS CEOX AND SIGEOX ALLOY-FILMS
Authors: ZACHARIAS M BLASING J LOHMANN M CHRISTEN J
Citation: M. Zacharias et al., FORMATION OF GE NANOCRYSTALS IN AMORPHOUS CEOX AND SIGEOX ALLOY-FILMS, Thin solid films, 278(1-2), 1996, pp. 32-36
PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE OF ALGAAS SINGLE QUANTUM WIRES ON VICINAL GAAS(110) SURFACES
Authors: NAKASHIMA H TAKEUCHI M KIMURA K IWANE M HUANG HK INOUE K CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE OF ALGAAS SINGLE QUANTUM WIRES ON VICINAL GAAS(110) SURFACES, Solid-state electronics, 40(1-8), 1996, pp. 319-322
FORMATION OF SI QUANTUM DOTS IN NANOCRYSTALLINE SILICON
Authors: SCHOENFELD O ZHAO X CHRISTEN J HEMPEL T NOMURA S AOYAGI Y
Citation: O. Schoenfeld et al., FORMATION OF SI QUANTUM DOTS IN NANOCRYSTALLINE SILICON, Solid-state electronics, 40(1-8), 1996, pp. 605-608
GE NANOCRYSTALS WITH A SHARP SIZE DISTRIBUTION - A DETAILED STUDY OF THE CRYSTALLIZATION OF A-SI1-XOXGEY ALLOY-FILMS
Authors: ZACHARIAS M BLASING J CHRISTEN J WENDT U
Citation: M. Zacharias et al., GE NANOCRYSTALS WITH A SHARP SIZE DISTRIBUTION - A DETAILED STUDY OF THE CRYSTALLIZATION OF A-SI1-XOXGEY ALLOY-FILMS, Journal of non-crystalline solids, 200, 1996, pp. 919-922
VISIBLE LUMINESCENCE FROM GE NANOCRYSTALS EMBEDDED IN A-SI1-XOX FILMS- CORRELATION OF OPTICAL-PROPERTIES AND SIZE DISTRIBUTION
Authors: ZACHARIAS M CHRISTEN J BASING J BIMBERG D
Citation: M. Zacharias et al., VISIBLE LUMINESCENCE FROM GE NANOCRYSTALS EMBEDDED IN A-SI1-XOX FILMS- CORRELATION OF OPTICAL-PROPERTIES AND SIZE DISTRIBUTION, Journal of non-crystalline solids, 200, 1996, pp. 115-118
FORMATION OF ALGAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES MISORIENTED 3-DEGREES TOWARD (111)A BY MOLECULAR-BEAM EPITAXY
Authors: NAKASHIMA H TAKEUCHI M SATO K SHIBA K HUANG HK MAEHASHI K INOUE K CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., FORMATION OF ALGAAS QUANTUM WIRES ON VICINAL GAAS(110) SURFACES MISORIENTED 3-DEGREES TOWARD (111)A BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 295-298
FORMATION OF GE NANOCRYSTALS WITH SHARP SIZE DISTRIBUTION - STRUCTURAL AND OPTICAL CHARACTERIZATION
Authors: ZACHARIAS M BLASING J CHRISTEN J VEIT P DIETRICH B BIMBERG D
Citation: M. Zacharias et al., FORMATION OF GE NANOCRYSTALS WITH SHARP SIZE DISTRIBUTION - STRUCTURAL AND OPTICAL CHARACTERIZATION, Superlattices and microstructures, 18(2), 1995, pp. 139-145
INAS GAAS QUANTUM DOTS - RADIATIVE RECOMBINATION FROM ZERO-DIMENSIONAL STATES/
Authors: GRUNDMANN M LEDENTSOV NN HEITZ R ECKEY L CHRISTEN J BOHRER J BIMBERG D RUVIMOV SS WERNER P RICHTER U HEYDENREICH J USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ALFEROV ZI
Citation: M. Grundmann et al., INAS GAAS QUANTUM DOTS - RADIATIVE RECOMBINATION FROM ZERO-DIMENSIONAL STATES/, Physica status solidi. b, Basic research, 188(1), 1995, pp. 249-258
Risultati: 1-25 | 26-35