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Results:
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Results: 17
Authors:
CLARYSSE T
VANDERVORST W
Citation: T. Clarysse et W. Vandervorst, QUALIFICATION OF SPREADING RESISTANCE PROBE OPERATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 260-271
Authors:
DEWOLF P
CLARYSSE T
VANDERVORST W
Citation: P. Dewolf et al., QUANTIFICATION OF NANOSPREADING RESISTANCE PROFILING DATA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 320-326
Authors:
DEWOLF P
CLARYSSE T
VANDERVORST W
HELLEMANS L
NIEDERMANN P
HANNI W
Citation: P. Dewolf et al., CROSS-SECTIONAL NANO-SPREADING RESISTANCE PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 355-361
Authors:
CLARYSSE T
CAYMAX M
DEWOLF P
TRENKLER T
VANDERVORST W
MCMURRAY JS
KIM J
WILLIAMS CC
CLARK JG
NEUBAUER G
Citation: T. Clarysse et al., EPITAXIAL STAIRCASE STRUCTURE FOR THE CALIBRATION OF ELECTRICAL CHARACTERIZATION TECHNIQUES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 394-400
Authors:
DEWOLF P
CLARYSSE T
VANDERVORST W
HELLEMANS L
Citation: P. Dewolf et al., LOW-WEIGHT SPREADING RESISTANCE PROFILING OF ULTRASHALLOW DOPANT PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 401-405
Authors:
CLARYSSE T
DEWOLF P
BENDER H
VANDERVORST W
Citation: T. Clarysse et al., RECENT INSIGHTS INTO THE PHYSICAL MODELING OF THE SPREADING RESISTANCE POINT-CONTACT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 358-368
Authors:
DEWOLF P
CLARYSSE T
VANDERVORST W
SNAUWAERT J
HELLEMANS L
Citation: P. Dewolf et al., ONE-DIMENSIONAL AND 2-DIMENSIONAL CARRIER PROFILING IN SEMICONDUCTORSBY NANOSPREADING RESISTANCE PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 380-385
Authors:
CLARYSSE T
VANDERVORST W
PAWLIK M
Citation: T. Clarysse et al., SHEET RESISTANCE CORRECTIONS FOR SPREADING RESISTANCE ULTRASHALLOW PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 390-396
Authors:
VANDERVORST W
CLARYSSE T
SMITH HE
Citation: W. Vandervorst et al., INFLUENCE OF THE SUBSTRATE DOPING LEVEL ON SPREADING RESISTANCE PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 404-407
Authors:
DEWOLF P
SNAUWAERT J
HELLEMANS L
CLARYSSE T
VANDERVORST W
DOLIESLAEGER M
QUAEYHAEGENS D
Citation: P. Dewolf et al., LATERAL AND VERTICAL DOPANT PROFILING IN SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY USING CONDUCTING TIPS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1699-1704
Authors:
VANDERVORST W
CLARYSSE T
DEWOLF P
HELLEMANS L
SNAUWAERT J
PRIVITERA V
RAINERI V
Citation: W. Vandervorst et al., ON THE DETERMINATION OF 2-DIMENSIONAL CARRIER DISTRIBUTIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 123-132
Authors:
DEWOLF P
SNAUWAERT J
CLARYSSE T
VANDERVORST W
HELLEMANS L
Citation: P. Dewolf et al., CHARACTERIZATION OF A POINT-CONTACT ON SILICON USING FORCE MICROSCOPY-SUPPORTED RESISTANCE MEASUREMENTS, Applied physics letters, 66(12), 1995, pp. 1530-1532
Authors:
VANDERVORST W
PRIVITERA V
RAINERI V
CLARYSSE T
PAWLIK M
Citation: W. Vandervorst et al., 2-DIMENSIONAL SPREADING RESISTANCE PROFILING - RECENT UNDERSTANDINGS AND APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 276-282
Authors:
CLARYSSE T
VANDERVORST W
Citation: T. Clarysse et W. Vandervorst, AUTOMATIC-GENERATION OF SHALLOW ELECTRICALLY ACTIVE DOPANT PROFILES FROM SPREADING RESISTANCE MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 290-297
Authors:
CZECH I
CLARYSSE T
VANDERVORST W
Citation: I. Czech et al., ON THE REDUCTION OF CARRIER SPILLING EFFECTS DURING RESISTANCE MEASUREMENTS WITH THE SPREADING IMPEDANCE PROBE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 298-303
Authors:
SNAUWAERT J
HELLEMANS L
CZECH I
CLARYSSE T
VANDERVORST W
PAWLIK M
Citation: J. Snauwaert et al., TOWARDS A PHYSICAL UNDERSTANDING OF SPREADING RESISTANCE PROBE TECHNIQUE PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 304-311
Authors:
HUYSKENS D
DEBISSCHOP P
CLARYSSE T
VANDERVORST W
Citation: D. Huyskens et al., ION-BEAM SIMULATION SIMION OS 2 - 1200000 POINTS, MULTITASKING AND NEW OPTIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 74(4), 1993, pp. 573-580
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1-17
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