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Results: 1-7 |
Results: 7
PULSED LASER-INDUCED SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS AS A FUNCTION OF OPTICAL PENETRATION DEPTH
Authors: MELINGER JS MCMORROW D CAMPBELL AB BUCHNER S TRAN LH KNUDSON AR CURTICE WR
Citation: Js. Melinger et al., PULSED LASER-INDUCED SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS AS A FUNCTION OF OPTICAL PENETRATION DEPTH, Journal of applied physics, 84(2), 1998, pp. 690-703
CHARGE-ENHANCEMENT MECHANISMS OF GAAS FIELD-EFFECT TRANSISTORS - EXPERIMENT AND SIMULATION
Authors: MCMORROW D MELINGER JS KNUDSON AR BUCHNER S TRAN LH CAMPBELL AB CURTICE WR
Citation: D. Mcmorrow et al., CHARGE-ENHANCEMENT MECHANISMS OF GAAS FIELD-EFFECT TRANSISTORS - EXPERIMENT AND SIMULATION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1494-1500
CHARGE-COLLECTION MECHANISMS OF ALGAAS GAAS HBTS/
Authors: MCMORROW D MELINGER JS KNUDSON AR BUCHNER S CAMPBELL AB CURTICE WR
Citation: D. Mcmorrow et al., CHARGE-COLLECTION MECHANISMS OF ALGAAS GAAS HBTS/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2274-2281
CHARGE-COLLECTION CHARACTERISTICS OF GAAS-MESFETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER - COMPUTER-SIMULATION
Authors: MCMORROW D CURTICE WR BUCHNER S KNUDSON AR MELINGER JS CAMPBELL AB
Citation: D. Mcmorrow et al., CHARGE-COLLECTION CHARACTERISTICS OF GAAS-MESFETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER - COMPUTER-SIMULATION, IEEE transactions on nuclear science, 43(6), 1996, pp. 2904-2912
ELIMINATION OF CHARGE-ENHANCEMENT EFFECTS IN GAAS-FETS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER
Authors: MCMORROW D WEATHERFORD TR CURTICE WR KNUDSON AR BUCHNER S MELINGER JS TRAN LH CAMPBELL AB
Citation: D. Mcmorrow et al., ELIMINATION OF CHARGE-ENHANCEMENT EFFECTS IN GAAS-FETS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 42(6), 1995, pp. 1837-1843
SIGNIFICANT REDUCTION IN THE SOFT ERROR SUSCEPTIBILITY OF GAAS FIELD-EFFECT TRANSISTORS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER
Authors: WEATHERFORD TR MCMORROW D CAMPBELL AB CURTICE WR
Citation: Tr. Weatherford et al., SIGNIFICANT REDUCTION IN THE SOFT ERROR SUSCEPTIBILITY OF GAAS FIELD-EFFECT TRANSISTORS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, Applied physics letters, 67(5), 1995, pp. 703-705
SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS
Authors: WEATHERFORD TR MCMORROW D CURTICE WR KNUDSON AR CAMPBELL AB
Citation: Tr. Weatherford et al., SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1867-1871
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