AAAAAA

   
Results: 1-11 |
Results: 11
Untitled
Authors: Saka, H Caillard, D
Citation: H. Saka et D. Caillard, Untitled, J MICROSC O, 203, 2001, pp. 1-1
Quantitative measurements in in situ straining experiments in transmissionelectron microscopy
Authors: Pettinari, F Couret, A Caillard, D Molenat, G Clement, N Coujou, A
Citation: F. Pettinari et al., Quantitative measurements in in situ straining experiments in transmissionelectron microscopy, J MICROSC O, 203, 2001, pp. 47-56
Dislocation mobility and electronic effects in semiconductor compounds
Authors: Vanderschaeve, G Levade, C Caillard, D
Citation: G. Vanderschaeve et al., Dislocation mobility and electronic effects in semiconductor compounds, J MICROSC O, 203, 2001, pp. 72-83
In situ observations of unusual dislocation mechanisms in the intermetallic alloy Ti3Al
Authors: Legros, M Caillard, D
Citation: M. Legros et D. Caillard, In situ observations of unusual dislocation mechanisms in the intermetallic alloy Ti3Al, J MICROSC O, 203, 2001, pp. 90-98
Characterization of the protective effect of aluminium surface treatments by d.c. and a.c. measurements
Authors: Dasquet, JP Caillard, D Bonino, JP Bes, RS
Citation: Jp. Dasquet et al., Characterization of the protective effect of aluminium surface treatments by d.c. and a.c. measurements, J MATER SCI, 36(14), 2001, pp. 3549-3555
Transmission electron microscopy study of dislocations and extended defects in as-grown icosahedral Al-Pd-Mn single grains
Authors: Caillard, D Vanderschaeve, G Bresson, L Gratias, D
Citation: D. Caillard et al., Transmission electron microscopy study of dislocations and extended defects in as-grown icosahedral Al-Pd-Mn single grains, PHIL MAG A, 80(1), 2000, pp. 237-253
Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors
Authors: Vanderschaeve, G Levade, C Caillard, D
Citation: G. Vanderschaeve et al., Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors, J PHYS-COND, 12(49), 2000, pp. 10093-10103
Investigation of the anodic oxide layer on 1050 and 2024T3 aluminium alloys by electron microscopy and electrochemical impedance spectroscopy
Authors: Dasquet, JP Caillard, D Conforto, E Bonino, JP Bes, R
Citation: Jp. Dasquet et al., Investigation of the anodic oxide layer on 1050 and 2024T3 aluminium alloys by electron microscopy and electrochemical impedance spectroscopy, THIN SOL FI, 371(1-2), 2000, pp. 183-190
Zinc impregnation of the anodic oxidation layer of 1050 and 2024 aluminiumalloys
Authors: Dasquet, JP Bonino, JP Caillard, D Bes, RS
Citation: Jp. Dasquet et al., Zinc impregnation of the anodic oxidation layer of 1050 and 2024 aluminiumalloys, J APPL ELEC, 30(7), 2000, pp. 845-853
In-situ straining experiments in NiAl along soft orientations, and comparison with atomistic simulations
Authors: Caillard, D Vailhe, C Farkas, D
Citation: D. Caillard et al., In-situ straining experiments in NiAl along soft orientations, and comparison with atomistic simulations, PHIL MAG A, 79(3), 1999, pp. 723-739
Mechanical properties of Fe70Al30 single crystals investigated by in situ straining experiments in a TEM
Authors: Molenat, G Rosner, H Caillard, D
Citation: G. Molenat et al., Mechanical properties of Fe70Al30 single crystals investigated by in situ straining experiments in a TEM, MAT SCI E A, 258(1-2), 1998, pp. 196-202
Risultati: 1-11 |