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Results:
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Results: 20
Authors:
Napolitani, E
Carnera, A
Privitera, V
Priolo, F
Citation: E. Napolitani et al., Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: methods and applications, MAT SC S PR, 4(1-3), 2001, pp. 55-60
Authors:
Mosca, R
Franchi, S
Frigeri, P
Gombia, E
Carnera, A
Peroni, M
Citation: R. Mosca et al., Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers, MAT SCI E B, 80(1-3), 2001, pp. 32-35
Authors:
Re, M
Scalese, S
Mirabella, S
Terrasi, A
Priolo, F
Rimini, E
Berti, M
Coati, A
Drigo, A
Carnera, A
De Salvador, D
Spinella, C
La Mantia, A
Citation: M. Re et al., Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 749-755
Authors:
Schroer, E
Privitera, V
Priolo, F
Napolitani, E
Carnera, A
Citation: E. Schroer et al., Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling, MAT SC S PR, 3(4), 2000, pp. 303-309
Authors:
Napolitani, E
Carnera, A
Storti, R
Privitera, V
Priolo, F
Mannino, G
Moffatt, S
Citation: E. Napolitani et al., Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument, J VAC SCI B, 18(1), 2000, pp. 519-523
Authors:
Schroer, E
Privitera, V
Priolo, F
Napolitani, E
Carnera, A
Moffatt, S
Citation: E. Schroer et al., Clustering of ultra-low-energy implanted boron in silicon during activation annealing, MAT SCI E B, 71, 2000, pp. 219-223
Authors:
Scalese, S
Franzo, G
Mirabella, S
Re, M
Terrasi, A
Priolo, F
Rimini, E
Spinella, C
Carnera, A
Citation: S. Scalese et al., Effect of O : Er concentration ratio on the structural, electrical, and optical properties of Si : Er : O layers grown by molecular beam epitaxy, J APPL PHYS, 88(7), 2000, pp. 4091-4096
Authors:
Privitera, V
Schroer, E
Priolo, F
Napolitani, E
Carnera, A
Citation: V. Privitera et al., Electrical behavior of ultra-low energy implanted boron in silicon, J APPL PHYS, 88(3), 2000, pp. 1299-1306
Authors:
Lulli, G
Bianconi, M
Solmi, S
Napolitani, E
Carnera, A
Citation: G. Lulli et al., Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions, J APPL PHYS, 87(12), 2000, pp. 8461-8466
Authors:
Schroer, E
Privitera, V
Priolo, F
Napolitani, E
Carnera, A
Citation: E. Schroer et al., Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source, APPL PHYS L, 76(21), 2000, pp. 3058-3060
Authors:
Privitera, V
Napolitani, E
Priolo, F
Moffatt, S
La Magna, A
Mannino, G
Carnera, A
Picariello, A
Citation: V. Privitera et al., Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon, MAT SC S PR, 2(1), 1999, pp. 35-44
Authors:
Gasparotto, A
Carnera, A
Paccagnella, A
Fraboni, B
Priolo, F
Gombia, E
Mosca, R
Rossetto, G
Citation: A. Gasparotto et al., Semi-insulating behaviour in Fe MeV implanted n-type InP, NUCL INST B, 148(1-4), 1999, pp. 411-415
Authors:
Mannino, G
Priolo, F
Privitera, V
Napolitani, E
Carnera, A
Citation: G. Mannino et al., Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon, NUCL INST B, 147(1-4), 1999, pp. 18-22
Authors:
Frigeri, C
Carnera, A
Gasparotto, A
Priolo, F
Fraboni, B
Camporese, A
Rossetto, G
Citation: C. Frigeri et al., Gettering of Fe at the end of range loops in Fe-implanted InP, PHYS ST S-A, 171(1), 1999, pp. 209-214
Authors:
Romanato, F
Napolitani, E
Carnera, A
Drigo, AV
Lazzarini, L
Salviati, G
Ferrari, C
Bosacchi, A
Franchi, S
Citation: F. Romanato et al., Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers, J APPL PHYS, 86(9), 1999, pp. 4748-4755
Authors:
Gasparotto, A
Carnera, A
Frigeri, C
Priolo, F
Fraboni, B
Camporese, A
Rossetto, G
Citation: A. Gasparotto et al., Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP, J APPL PHYS, 85(2), 1999, pp. 753-760
Authors:
Gasparotto, A
Carnera, A
Paccagnella, A
Fraboni, B
Priolo, F
Gombia, E
Mosca, R
Citation: A. Gasparotto et al., High-resistance buried layers by MeV Fe implantation in n-type InP, APPL PHYS L, 75(5), 1999, pp. 668-670
Authors:
Napolitani, E
Carnera, A
Schroer, E
Privitera, V
Priolo, F
Moffatt, S
Citation: E. Napolitani et al., Microscopical aspects of boron diffusion in ultralow energy implanted silicon, APPL PHYS L, 75(13), 1999, pp. 1869-1871
Authors:
Schroer, E
Privitera, V
Priolo, F
Napolitani, E
Carnera, A
Citation: E. Schroer et al., Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing, APPL PHYS L, 74(26), 1999, pp. 3996-3998
Authors:
Mannino, G
Priolo, F
Privitera, V
Raineri, V
Spinella, C
Napolitani, E
Carnera, A
Arena, G
Messina, A
Rapisarda, C
Citation: G. Mannino et al., Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron, J APPL PHYS, 84(12), 1998, pp. 6628-6635
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