AAAAAA
Results:
1-10
|
Results: 10
Authors:
Estrada, M
Cerdeira, A
Leyva, A
Carreno, MNP
Pereyra, I
Citation: M. Estrada et al., Optimization of the i-layer width of Cr-a-Si : H PIN X-ray detectors, THIN SOL FI, 396(1-2), 2001, pp. 235-239
Authors:
Cerdeira, A
Estrada, M
Garcia, R
Ortiz-Conde, A
Sanchez, FJG
Citation: A. Cerdeira et al., New procedure for the extraction of basic a-Si : H TFT model parameters inthe linear and saturation regions, SOL ST ELEC, 45(7), 2001, pp. 1077-1080
Authors:
Ortiz-Conde, A
Cerdeira, A
Estrada, M
Sanchez, FJG
Quintero, R
Citation: A. Ortiz-conde et al., A simple procedure to extract the threshold voltage of amorphous thin filmMOSFETs in the saturation region, SOL ST ELEC, 45(5), 2001, pp. 663-667
Authors:
Ortiz-Conde, A
Estrada, M
Cerdeira, A
Sanchez, FJG
De Mercato, G
Citation: A. Ortiz-conde et al., Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction, SOL ST ELEC, 45(2), 2001, pp. 223-228
Authors:
Estrada, M
Cerdeira, A
Ortiz-Conde, A
Garcia, F
Citation: M. Estrada et al., Determination of trap cross-section in a-Si : H p-i-n diodes parameters using simulation and parameter extraction, MICROEL REL, 41(4), 2001, pp. 605-610
Authors:
Estrada, M
Cerdeira, A
Pereyra, I
Soto, S
Citation: M. Estrada et al., High deposition rate a-Si : H layers from pure SiH4 and from a 10% dilution of SiH4 in H-2, THIN SOL FI, 373(1-2), 2000, pp. 176-179
Authors:
Sanchez, FJG
Ortiz-Conde, A
Salcedo, JA
Muci, J
Estrada, M
Cerdeira, A
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., Validation of bulk-charge effect parameter extraction in MOSFETs, MICROEL REL, 40(6), 2000, pp. 941-945
Authors:
Estrada, M
Cerdeira, A
Pereyra, I
Soto, BS
Citation: M. Estrada et al., Characteristics of high deposition rate pin diodes from pure SiH4 and 10% dilution of SiH4 in H-2, IEEE NUCL S, 47(1), 2000, pp. 33-35
Authors:
Cerdeira, A
Estrada, M
Citation: A. Cerdeira et M. Estrada, Modeling of reverse current behavior in amorphous thin and thick p-i-n diodes, IEEE DEVICE, 47(11), 2000, pp. 2238-2240
Authors:
Alcantara, S
Cerdeira, A
Romero, G
Citation: S. Alcantara et al., Pressure sensors with longitudinal and transverse MOS transistors, QUIM ANAL, 18, 1999, pp. 73-75
Risultati:
1-10
|