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Results: 1-19 |
Results: 19
In-situ FTIR studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin SiO2 on Si(100)
Authors: Queeney, KT Fukidome, H Chaban, EE Chabal, YJ
Citation: Kt. Queeney et al., In-situ FTIR studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin SiO2 on Si(100), J PHYS CH B, 105(18), 2001, pp. 3903-3907
Vibrational studies of ultra-thin oxides and initial silicon oxidation
Authors: Chabal, YJ Weldon, MK Queeney, KT Esteve, A
Citation: Yj. Chabal et al., Vibrational studies of ultra-thin oxides and initial silicon oxidation, SPR S MAT S, 46, 2001, pp. 143-159
Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces
Authors: Zhang, X Chabal, YJ Christman, SB Chaban, EE Garfunkel, E
Citation: X. Zhang et al., Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces, J VAC SCI A, 19(4), 2001, pp. 1725-1729
Role of interdimer interactions in NH3 dissociation on Si(100)-(2 x 1)
Authors: Queeney, KT Chabal, YJ Raghavachari, K
Citation: Kt. Queeney et al., Role of interdimer interactions in NH3 dissociation on Si(100)-(2 x 1), PHYS REV L, 86(6), 2001, pp. 1046-1049
Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3)
Authors: Amy, F Enriquez, H Soukiassian, P Storino, PF Chabal, YJ Mayne, AJ Dujardin, G Hwu, YK Brylinski, C
Citation: F. Amy et al., Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3), PHYS REV L, 86(19), 2001, pp. 4342-4345
Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation
Authors: Esteve, A Chabal, YJ Raghavachari, K Weldon, MK Queeney, KT Rouhani, MD
Citation: A. Esteve et al., Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation, J APPL PHYS, 90(12), 2001, pp. 6000-6005
Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si
Authors: Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation: J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927
Stability of HF-etched Si(100) surfaces in oxygen ambient
Authors: Zhang, X Garfunkel, E Chabal, YJ Christman, SB Chaban, EE
Citation: X. Zhang et al., Stability of HF-etched Si(100) surfaces in oxygen ambient, APPL PHYS L, 79(24), 2001, pp. 4051-4053
Si-H bending modes as a probe of local chemical structure: Thermal and chemical routes to decomposition of H2O on Si(100)-(2x1)
Authors: Weldon, MK Queeney, KT Gurevich, AB Stefanov, BB Chabal, YJ Raghavachari, K
Citation: Mk. Weldon et al., Si-H bending modes as a probe of local chemical structure: Thermal and chemical routes to decomposition of H2O on Si(100)-(2x1), J CHEM PHYS, 113(6), 2000, pp. 2440-2446
Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
Authors: Queeney, KT Weldon, MK Chang, JP Chabal, YJ Gurevich, AB Sapjeta, J Opila, RL
Citation: Kt. Queeney et al., Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon, J APPL PHYS, 87(3), 2000, pp. 1322-1330
High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon
Authors: Kwo, J Hong, M Kortan, AR Queeney, KT Chabal, YJ Mannaerts, JP Boone, T Krajewski, JJ Sergent, AM Rosamilia, JM
Citation: J. Kwo et al., High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon, APPL PHYS L, 77(1), 2000, pp. 130-132
Mechanistic studies of silicon oxidation
Authors: Weldon, MK Queeney, KT Chabal, YJ Stefanov, BB Raghavachari, K
Citation: Mk. Weldon et al., Mechanistic studies of silicon oxidation, J VAC SCI B, 17(4), 1999, pp. 1795-1802
Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation
Authors: Chabal, YJ Weldon, MK Caudano, Y Stefanov, BB Raghavachari, K
Citation: Yj. Chabal et al., Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation, PHYSICA B, 274, 1999, pp. 152-163
Molecules at surfaces and interfaces studied using vibrational spectroscopies and related techniques
Authors: Dumas, P Weldon, MK Chabal, YJ Williams, GP
Citation: P. Dumas et al., Molecules at surfaces and interfaces studied using vibrational spectroscopies and related techniques, SURF REV L, 6(2), 1999, pp. 225-255
Anharmonic adlayer vibrations on the Si(111): H surface
Authors: Honke, R Jakob, P Chabal, YJ Dvorak, A Tausendpfund, S Stigler, W Pavone, P Mayer, AP Schroder, U
Citation: R. Honke et al., Anharmonic adlayer vibrations on the Si(111): H surface, PHYS REV B, 59(16), 1999, pp. 10996-11013
Silicon oxidation and ultra-thin oxide formation on silicon studied by infrared absorption spectroscopy
Authors: Queeney, KT Chabal, YJ Weldon, MK Raghavachari, K
Citation: Kt. Queeney et al., Silicon oxidation and ultra-thin oxide formation on silicon studied by infrared absorption spectroscopy, PHYS ST S-A, 175(1), 1999, pp. 77-88
Thermal evolution of impurities in wet chemical silicon oxides
Authors: Gurevich, AB Weldon, MK Chabal, YJ Opila, RL Sapjeta, J
Citation: Ab. Gurevich et al., Thermal evolution of impurities in wet chemical silicon oxides, APPL PHYS L, 74(9), 1999, pp. 1257-1259
Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on Si(100)-(2x1)
Authors: Gurevich, AB Stefanov, BB Weldon, MK Chabal, YJ Raghavachari, K
Citation: Ab. Gurevich et al., Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on Si(100)-(2x1), PHYS REV B, 58(20), 1998, pp. R13434-R13437
Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
Authors: Weldon, MK Collot, M Chabal, YJ Venezia, VC Agarwal, A Haynes, TE Eaglesham, DJ Christman, SB Chaban, EE
Citation: Mk. Weldon et al., Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation, APPL PHYS L, 73(25), 1998, pp. 3721-3723
Risultati: 1-19 |