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Results:
1-7
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Results: 7
Authors:
Varandani, D
Dilawar, N
Chakraborty, BR
Singh, D
Bandyopadhyay, AK
Citation: D. Varandani et al., High pressure Raman studies on n-GaAs, J MAT SCI L, 20(1), 2001, pp. 5-7
Authors:
Bera, SK
Chaudhuri, S
Bandyopadhyay, AK
Chakraborty, BR
Pal, AK
Citation: Sk. Bera et al., Quantum size effect in silicon nanocrystals prepared by dc magnetron sputtering, J PHYS D, 34(3), 2001, pp. 273-278
Authors:
Pal, S
Ray, SK
Chakraborty, BR
Lahiri, SK
Bose, DN
Citation: S. Pal et al., Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study, J APPL PHYS, 90(8), 2001, pp. 4103-4107
Authors:
Bhunia, S
Banerji, P
Chaudhuri, TK
Haldar, AR
Bose, DN
Aparna, Y
Chettri, MB
Chakraborty, BR
Citation: S. Bhunia et al., Optimization of growth of InGaAs/InP quantum wells using photoluminescenceand secondary ion mass spectrometry, B MATER SCI, 23(3), 2000, pp. 207-209
Authors:
Bose, DN
Banerji, P
Bhunia, S
Aparna, Y
Chhetri, MB
Chakraborty, BR
Citation: Dn. Bose et al., Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence, APPL SURF S, 158(1-2), 2000, pp. 16-20
Authors:
Dilawar, N
Varandani, D
Chakraborty, BR
Bandyopadhyay, AK
Citation: N. Dilawar et al., Raman and SIMS studies of rapid thermal annealing effect of silicon ion implanted GaAs, J PHYS CH S, 61(12), 2000, pp. 1927-1933
Authors:
Chakraborty, BR
Mohan, P
Shivaprasad, SM
Sharma, DR
Anandan, C
Gupta, AC
Raychaudhuri, AK
Citation: Br. Chakraborty et al., Surface analytical facility at NPL, New Delhi, CURRENT SCI, 78(12), 2000, pp. 1523-1527
Risultati:
1-7
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