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Results: 1-21 |
Results: 21
Resist hardening by fluorocarbon plasma for electron-beam and optical mix-and-match lithography
Authors: Chan, VWC Hai, CH Chan, PCH
Citation: Vwc. Chan et al., Resist hardening by fluorocarbon plasma for electron-beam and optical mix-and-match lithography, J VAC SCI B, 19(3), 2001, pp. 743-748
Investigation and control of microcracks in tin oxide gas sensing thin-films
Authors: Tang, ZN Chan, PCH Sharma, RK Yan, GZ Hsing, IM Sin, JKO
Citation: Zn. Tang et al., Investigation and control of microcracks in tin oxide gas sensing thin-films, SENS ACTU-B, 79(1), 2001, pp. 39-47
Reactive sputtered TiO2 thin film humidity sensor with negative substrate bias
Authors: Chow, LLW Yuen, MMF Chan, PCH Cheung, AT
Citation: Llw. Chow et al., Reactive sputtered TiO2 thin film humidity sensor with negative substrate bias, SENS ACTU-B, 76(1-3), 2001, pp. 310-315
Sensitive, selective and stable tin dioxide thin-films for carbon monoxideand hydrogen sensing in integrated gas sensor array applications
Authors: Sharma, RK Chan, PCH Tang, ZA Yan, G Hsing, IM Sin, JKO
Citation: Rk. Sharma et al., Sensitive, selective and stable tin dioxide thin-films for carbon monoxideand hydrogen sensing in integrated gas sensor array applications, SENS ACTU-B, 72(2), 2001, pp. 160-166
An improved TMAH Si-etching solution without attacking exposed aluminum
Authors: Yan, GZ Chan, PCH Hsing, IM Sharma, RK Sin, JKO Wang, YY
Citation: Gz. Yan et al., An improved TMAH Si-etching solution without attacking exposed aluminum, SENS ACTU-A, 89(1-2), 2001, pp. 135-141
Multiple layers of CMOS integrated circuits using recrystallized silicon film
Authors: Chan, VWC Chan, PCH Chan, M
Citation: Vwc. Chan et al., Multiple layers of CMOS integrated circuits using recrystallized silicon film, IEEE ELEC D, 22(2), 2001, pp. 77-79
Fabrication of gate-all-around transistors using metal induced lateral crystallization
Authors: Chan, VWC Chan, PCH
Citation: Vwc. Chan et Pch. Chan, Fabrication of gate-all-around transistors using metal induced lateral crystallization, IEEE ELEC D, 22(2), 2001, pp. 80-82
Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization
Authors: Chan, VWC Chan, PCH Chan, M
Citation: Vwc. Chan et al., Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization, IEEE DEVICE, 48(7), 2001, pp. 1394-1399
SOI thermal impedance extraction methodology and its significance for circuit simulation
Authors: Jin, W Liu, WD Fung, SKH Chan, PCH Hu, CM
Citation: W. Jin et al., SOI thermal impedance extraction methodology and its significance for circuit simulation, IEEE DEVICE, 48(4), 2001, pp. 730-736
Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier
Authors: Jin, W Liu, WD Hai, CH Chan, PCH Hu, CM
Citation: W. Jin et al., Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier, IEEE DEVICE, 48(4), 2001, pp. 803-809
A three-terminal SOI gated varactor for rf applications
Authors: Shen, KQ Hui, FPS Ming, W Wong, Y Chen, ZH Lau, J Chan, PCH Ko, PK
Citation: Kq. Shen et al., A three-terminal SOI gated varactor for rf applications, IEEE DEVICE, 48(2), 2001, pp. 289-293
Gas chromatographic study on adsorption selectivity of tin dioxide gas sensor to organic vapors
Authors: Wang, DK Ma, LZ Zhao, GL Tang, ZN Chan, PCH Sin, JKO Sheng, LY
Citation: Dk. Wang et al., Gas chromatographic study on adsorption selectivity of tin dioxide gas sensor to organic vapors, SENS ACTU-B, 66(1-3), 2000, pp. 156-158
Compatibility of CO gas sensitive SnO2/Pt thin film with silicon integrated circuit processing
Authors: Sharma, RK Tang, ZN Chan, PCH Sin, JKO Hsing, IM
Citation: Rk. Sharma et al., Compatibility of CO gas sensitive SnO2/Pt thin film with silicon integrated circuit processing, SENS ACTU-B, 64(1-3), 2000, pp. 49-53
An efficient structural approach to board interconnect diagnosis
Authors: Lo, CK Chan, PCH
Citation: Ck. Lo et Pch. Chan, An efficient structural approach to board interconnect diagnosis, INT J ELECT, 87(10), 2000, pp. 1239-1255
A physical thermal noise model for SOI MOSFET
Authors: Jin, W Chan, PCH Lau, J
Citation: W. Jin et al., A physical thermal noise model for SOI MOSFET, IEEE DEVICE, 47(4), 2000, pp. 768-773
A wide tuning range gated varactor
Authors: Wong, WMY Hui, PS Chen, ZH Shen, KQ Lau, J Chan, PCH Ko, PK
Citation: Wmy. Wong et al., A wide tuning range gated varactor, IEEE J SOLI, 35(5), 2000, pp. 773-779
An adiabatic differential logic for low-power digital systems
Authors: Lo, CK Chan, PCH
Citation: Ck. Lo et Pch. Chan, An adiabatic differential logic for low-power digital systems, IEEE CIR-II, 46(9), 1999, pp. 1245-1250
Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's
Authors: Jin, W Chan, PCH Fung, SKH Ko, PK
Citation: W. Jin et al., Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's, IEEE DEVICE, 46(6), 1999, pp. 1180-1185
Fully depleted CMOS/SOI device design guidelines for low-power applications
Authors: Banna, SR Chan, PCH Chan, MS Fung, SKH Ko, PK
Citation: Sr. Banna et al., Fully depleted CMOS/SOI device design guidelines for low-power applications, IEEE DEVICE, 46(4), 1999, pp. 754-761
A resistance-variation-tolerant constant-power heating circuit for integrated sensor applications
Authors: Chan, SSW Chan, PCH
Citation: Ssw. Chan et Pch. Chan, A resistance-variation-tolerant constant-power heating circuit for integrated sensor applications, IEEE J SOLI, 34(4), 1999, pp. 432-439
Pregate oxidation treatment using radio frequency activated nitrogen in a rapid thermal reactor
Authors: Wong, M Ho, WH Yeung, M Chin, G Chan, PCH Zohar, Y
Citation: M. Wong et al., Pregate oxidation treatment using radio frequency activated nitrogen in a rapid thermal reactor, J ELCHEM SO, 146(2), 1999, pp. 707-709
Risultati: 1-21 |