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Results: 1-12 |
Results: 12
Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb
Authors: Borrego, JM Saroop, S Gutmann, RJ Charache, GW Donovan, T Baldasaro, PF Wang, CA
Citation: Jm. Borrego et al., Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb, J APPL PHYS, 89(7), 2001, pp. 3753-3759
Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs
Authors: Baldasaro, PF Raynolds, JE Charache, GW DePoy, DM Ballinger, CT Donovan, T Borrego, JM
Citation: Pf. Baldasaro et al., Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs, J APPL PHYS, 89(6), 2001, pp. 3319-3327
Epitaxial growth of GaInAsSb for thermophotovoltaic devices
Authors: Wang, CA Choi, HK Charache, GW
Citation: Ca. Wang et al., Epitaxial growth of GaInAsSb for thermophotovoltaic devices, IEE P-OPTO, 147(3), 2000, pp. 193-198
Optical constants of Ga1-xInxAsySb1-y lattice matched to GaSb (001): Experiment and modeling
Authors: Munoz, M Wei, K Pollak, FH Freeouf, JL Wang, CA Charache, GW
Citation: M. Munoz et al., Optical constants of Ga1-xInxAsySb1-y lattice matched to GaSb (001): Experiment and modeling, J APPL PHYS, 87(4), 2000, pp. 1780-1787
Spectral ellipsometry of GaSb: Experiment and modeling
Authors: Munoz, M Wei, K Pollak, FH Freeouf, JL Charache, GW
Citation: M. Munoz et al., Spectral ellipsometry of GaSb: Experiment and modeling, PHYS REV B, 60(11), 1999, pp. 8105-8110
Recombination processes in doubly capped antimonide-based quaternary thin films
Authors: Saroop, S Borrego, JM Gutmann, RJ Charache, GW Wang, CA
Citation: S. Saroop et al., Recombination processes in doubly capped antimonide-based quaternary thin films, J APPL PHYS, 86(3), 1999, pp. 1527-1534
Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y
Authors: Charache, GW DePoy, DM Raynolds, JE Baldasaro, PF Miyano, KE Holden, T Pollak, FH Sharps, PR Timmons, ML Geller, CB Mannstadt, W Asahi, R Freeman, AJ Wolf, W
Citation: Gw. Charache et al., Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y, J APPL PHYS, 86(1), 1999, pp. 452-458
InGaAsSb thermophotovoltaic diode: Physics evaluation
Authors: Charache, GW Baldasaro, PF Danielson, LR DePoy, DM Freeman, MJ Wang, CA Choi, HK Garbuzov, DZ Martinelli, RU Khalfin, V Saroop, S Borrego, JM Gutmann, RJ
Citation: Gw. Charache et al., InGaAsSb thermophotovoltaic diode: Physics evaluation, J APPL PHYS, 85(4), 1999, pp. 2247-2252
Antimonide-based devices for thermophotovoltaic applications
Authors: Hitchcock, CW Gutmann, RJ Borrego, JM Bhat, IB Charache, GW
Citation: Cw. Hitchcock et al., Antimonide-based devices for thermophotovoltaic applications, IEEE DEVICE, 46(10), 1999, pp. 2154-2161
High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
Authors: Wang, CA Choi, HK Ransom, SL Charache, GW Danielson, LR DePoy, DM
Citation: Ca. Wang et al., High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices, APPL PHYS L, 75(9), 1999, pp. 1305-1307
Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy
Authors: Wang, CA Choi, HK Oakley, DC Charache, GW
Citation: Ca. Wang et al., Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 346-355
Ternary and quaternary antimonide devices for thermophotovoltaic applications
Authors: Hitchcock, CW Gutmann, RJ Ehsani, H Bhat, IB Wang, CA Freeman, MJ Charache, GW
Citation: Cw. Hitchcock et al., Ternary and quaternary antimonide devices for thermophotovoltaic applications, J CRYST GR, 195(1-4), 1998, pp. 363-372
Risultati: 1-12 |