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Results: 1-20 |
Results: 20
UV- and UV/Fe(III)-enhanced ozonation of nitrobenzene in aqueous solution
Authors: Contreras, S Rodriguez, M Chamarro, E Esplugas, S
Citation: S. Contreras et al., UV- and UV/Fe(III)-enhanced ozonation of nitrobenzene in aqueous solution, J PHOTOCH A, 142(1), 2001, pp. 79-83
A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure
Authors: Bouzaiene, L Sfaxi, L Sghaeir, H Maaref, H Cavanna, A Jouault, B Contreras, S Konczewicz, L
Citation: L. Bouzaiene et al., A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure, OPT MATER, 17(1-2), 2001, pp. 299-303
Control of Al-implantation doping in 4H-SiC
Authors: Pernot, J Camassel, J Contreras, S Robert, JL Bluet, JM Michaud, JF Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365
Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures
Authors: Konczewicz, L Jouault, B Contreras, S Sadowski, ML Robert, JL Blanc, S Fontaine, C
Citation: L. Konczewicz et al., Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures, PHYS ST S-B, 223(2), 2001, pp. 507-512
Oxidation of nitrobenzene by O-3/UV: the influence of H2O2 and Fe(III). Experiences in a pilot plant
Authors: Contreras, S Rodriguez, M Chamarro, E Esplugas, S Casado, J
Citation: S. Contreras et al., Oxidation of nitrobenzene by O-3/UV: the influence of H2O2 and Fe(III). Experiences in a pilot plant, WATER SCI T, 44(5), 2001, pp. 39-46
Anti-depressant prescribing patterns for prison inmates with depressive disorders
Authors: Baillargeon, J Black, SA Contreras, S Grady, J Pulvino, J
Citation: J. Baillargeon et al., Anti-depressant prescribing patterns for prison inmates with depressive disorders, J AFFECT D, 63(1-3), 2001, pp. 225-231
Microscale technique for in situ measurement of elastic parameters of materials under reactive atmosphere
Authors: Fabre, A Finot, E Demoment, J Contreras, S Goudonnet, JP
Citation: A. Fabre et al., Microscale technique for in situ measurement of elastic parameters of materials under reactive atmosphere, REV SCI INS, 72(10), 2001, pp. 3914-3920
Electrical transport in n-type 4H silicon carbide
Authors: Pernot, J Zawadzki, W Contreras, S Robert, JL Neyret, E Di Cioccio, L
Citation: J. Pernot et al., Electrical transport in n-type 4H silicon carbide, J APPL PHYS, 90(4), 2001, pp. 1869-1878
High magnetic field studies of two-dimensional electron gas in a GaN/GaAlNheterostructure: Mechanisms of parallel conduction
Authors: Contreras, S Knap, W Frayssinet, E Sadowski, ML Goiran, M Shur, M
Citation: S. Contreras et al., High magnetic field studies of two-dimensional electron gas in a GaN/GaAlNheterostructure: Mechanisms of parallel conduction, J APPL PHYS, 89(2), 2001, pp. 1251-1255
SiC materials: a semiconductor family for the next century
Authors: Camassel, J Contreras, S Robert, JL
Citation: J. Camassel et al., SiC materials: a semiconductor family for the next century, CR AC S IV, 1(1), 2000, pp. 5-21
SiC characterization techniques: Specificity of optical and electrical properties
Authors: Camassel, J Contreras, S
Citation: J. Camassel et S. Contreras, SiC characterization techniques: Specificity of optical and electrical properties, VIDE, 55(298), 2000, pp. 429
Compliance with antidepressant medication among prison inmates with depressive disorders
Authors: Baillargeon, J Contreras, S Grady, JJ Black, SA Murray, O
Citation: J. Baillargeon et al., Compliance with antidepressant medication among prison inmates with depressive disorders, PSYCH SERV, 51(11), 2000, pp. 1444-1446
Influence of H2O2 and Fe(III) in the photodegradation of nitrobenzene
Authors: Rodriguez, M Kirchner, A Contreras, S Chamarro, E Esplugas, S
Citation: M. Rodriguez et al., Influence of H2O2 and Fe(III) in the photodegradation of nitrobenzene, J PHOTOCH A, 133(1-2), 2000, pp. 123-127
Site order parameters for +/- J Ising lattices
Authors: Ramirez-Pastor, AJ Nieto, F Contreras, S Vogel, EE
Citation: Aj. Ramirez-pastor et al., Site order parameters for +/- J Ising lattices, PHYSICA A, 283(1-2), 2000, pp. 94-99
Activation of aluminum implanted at high doses in 4H-SiC
Authors: Bluet, JM Pernot, J Camassel, J Contreras, S Robert, JL Michaud, JF Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977
Free electron density and mobility in high-quality 4H-SiC
Authors: Pernot, J Contreras, S Camassel, J Robert, JL Zawadzki, W Neyret, E Di Cioccio, L
Citation: J. Pernot et al., Free electron density and mobility in high-quality 4H-SiC, APPL PHYS L, 77(26), 2000, pp. 4359-4361
Shallow and deep donors in transport properties of N-implanted 6H-SiC
Authors: Thomas, P Contreras, S Robert, JL Zawadzki, W Gimbert, J Billon, T
Citation: P. Thomas et al., Shallow and deep donors in transport properties of N-implanted 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 301-304
Percolating spin-glass domains in diluted +/- J square lattices
Authors: Vogel, EE Contreras, S Osorio, MA Ramirez-Pastor, AJ Nieto, F
Citation: Ee. Vogel et al., Percolating spin-glass domains in diluted +/- J square lattices, PHYSICA A, 266(1-4), 1999, pp. 425-429
Electrical properties of GaN bulk single crystals doped with Mg
Authors: Litwin-Staszewska, E Suski, T Grzegory, I Porowski, S Perlin, P Robert, JL Contreras, S Wasik, D Witowski, A Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Electrical properties of GaN bulk single crystals doped with Mg, PHYS ST S-B, 216(1), 1999, pp. 567-570
Pressure and Hall sensors: what does MBE allow to do?
Authors: Robert, JL Contreras, S Sicart, J Mosser, V Kobbi, F
Citation: Jl. Robert et al., Pressure and Hall sensors: what does MBE allow to do?, J CRYST GR, 202, 1999, pp. 727-733
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