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Results: 1-14 |
Results: 14
LARGE ARRAY OF GAAS MODULATORS AND DETECTORS FLIP-CHIP SOLDER BONDED TO SILICON CMOS USING INGAP AS THE SELECTIVE ETCH-STOP FOR GAAS SUBSTRATE REMOVAL
Authors: KUO JM WANG YC GOOSSEN KW CHIROVSKY LMF HUI SP TSENG BT WALKER J LENTINE AL LEIBENGUTH RE LIVESCU G JAN WY CUNNINGHAM JE DASARO LA RON A DAHRINGER D KOSSIVES D BACON DD MORRISON RL NOVOTNY RA BUCHHOLZ DB MAYO WE
Citation: Jm. Kuo et al., LARGE ARRAY OF GAAS MODULATORS AND DETECTORS FLIP-CHIP SOLDER BONDED TO SILICON CMOS USING INGAP AS THE SELECTIVE ETCH-STOP FOR GAAS SUBSTRATE REMOVAL, Journal of crystal growth, 175, 1997, pp. 971-976
HIGH-SPEED OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN-4000 OPTICAL I O BASED ON FLIP-CHIP BONDING OF MQW MODULATORS AND DETECTORSTO SILICON CMOS/
Authors: LENTINE AL GOOSSEN KW WALKER JA CHIROVSKY LMF DASARO LA HUI SP TSENG BJ LEIBENGUTH RE CUNNINGHAM JE JAN WY KUO JM DAHRINGER DW KOSSIVES DP BACON D LIVESCU G MORRISON RL NOVOTNY RA BUCHHOLZ DB
Citation: Al. Lentine et al., HIGH-SPEED OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN-4000 OPTICAL I O BASED ON FLIP-CHIP BONDING OF MQW MODULATORS AND DETECTORSTO SILICON CMOS/, IEEE journal of selected topics in quantum electronics, 2(1), 1996, pp. 77-84
IMPROVED MODULATION CONTRAST OF ASYMMETRIC FABRY-PEROT FIELD-EFFECT TRANSISTOR SELF-ELECTRO-OPTIC EFFECT DEVICES BY IN-SITU THICKNESS CORRECTIONS
Authors: KUO JM DASARO LA KUO HC PEI SS CHANG PC
Citation: Jm. Kuo et al., IMPROVED MODULATION CONTRAST OF ASYMMETRIC FABRY-PEROT FIELD-EFFECT TRANSISTOR SELF-ELECTRO-OPTIC EFFECT DEVICES BY IN-SITU THICKNESS CORRECTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2252-2255
1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/
Authors: WOODWARD TK KRISHNAMOORTHY AV LENTINE AL GOOSSEN KW WALKER JA CUNNINGHAM JE JAN WY DASARO LA CHIROVSKY LMF HUI SP TSENG B KOSSIVES D DAHRINGER D LEIBENGUTH RE
Citation: Tk. Woodward et al., 1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/, IEEE photonics technology letters, 8(3), 1996, pp. 422-424
ARRAYS OF OPTOELECTRONIC SWITCHING NODES COMPRISED OF FLIP-CHIP-BONDED MQW MODULATORS AND DETECTORS ON SILICON CMOS CIRCUITRY
Authors: LENTINE AL GOOSSEN KW WALKER JA CHIROVSKY LMF DASARO LA HUI SP TSENG BT LEIBENGUTH RE KOSSIVES DP DAHRINGER DW BACON DD WOODWARD TK MILLER DAB
Citation: Al. Lentine et al., ARRAYS OF OPTOELECTRONIC SWITCHING NODES COMPRISED OF FLIP-CHIP-BONDED MQW MODULATORS AND DETECTORS ON SILICON CMOS CIRCUITRY, IEEE photonics technology letters, 8(2), 1996, pp. 221-223
PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) CIRCUITS - ERRATA
Authors: KRISHNAMOORTHY AV FORD JE GOOSSEN KW WALKER JA LENTINE AL HUI SP TSENG B CHIROVSKY LMF LEIBENGUTH R KOSSIVES D DAHRINGER D DASARO LA KIAMILEV FE APLIN GF ROZIER RG MILLER DAB
Citation: Av. Krishnamoorthy et al., PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) CIRCUITS - ERRATA, Applied optics, 35(23), 1996, pp. 4637-4640
PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) CIRCUITS
Authors: KRISHNAMOORTHY AV FORD JE GOOSSEN KW WALKER JA LENTINE AL HUI SP TSENG B CHIROVSKY LMF LEIBENGUTH R KOSSIVES D DAHRINGER D DASARO LA KIAMILEV FE APLIN GF ROZIER RG MILLER DAB
Citation: Av. Krishnamoorthy et al., PHOTONIC PAGE BUFFER BASED ON GAAS MULTIPLE-QUANTUM-WELL MODULATORS BONDED DIRECTLY OVER ACTIVE SILICON COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) CIRCUITS, Applied optics, 35(14), 1996, pp. 2439-2448
GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS
Authors: GOOSSEN KW WALKER JA DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D BACON DD DAHRINGER D CHIROVSKY LMF LENTINE AL MILLER DAB
Citation: Kw. Goossen et al., GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS, IEEE photonics technology letters, 7(4), 1995, pp. 360-362
3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS- 375 MB S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT/
Authors: KRISHNAMOORTHY AV LENTINE AL GOOSSEN KW WALKER JA WOODWARD TK FORD JE APLIN GF DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D DAHRINGER D CHIROVSKY LMF MILLER DAB
Citation: Av. Krishnamoorthy et al., 3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS- 375 MB S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT/, IEEE photonics technology letters, 7(11), 1995, pp. 1288-1290
RING OSCILLATORS WITH MONOLITHICALLY INTEGRATED-OPTICAL READOUT BASEDON GAAS-ALGAAS FET-SEED TECHNOLOGY
Authors: WOODWARD TK NOVOTNY RA LENTINE AL CHIROVSKY LMF DASARO LA HUI S FOCHT MW GUTH GD SMITH LE LEIBENGUTH RE
Citation: Tk. Woodward et al., RING OSCILLATORS WITH MONOLITHICALLY INTEGRATED-OPTICAL READOUT BASEDON GAAS-ALGAAS FET-SEED TECHNOLOGY, IEEE electron device letters, 16(2), 1995, pp. 52-54
FIELD-EFFECT TRANSISTOR SELF ELECTROOPTIC EFFECT DEVICE (FET-SEED) DIFFERENTIAL TRANSIMPEDANCE AMPLIFIERS FOR 2-DIMENSIONAL OPTICAL-DATA LINKS
Authors: NOVOTNY RA WOJCIK MJ LENTINE AL CHIROVSKY LMF DASARO LA FOCHT MW GUTH G GLOGOVSKY KG LEIBENGUTH R ASOM MT FREUND JM
Citation: Ra. Novotny et al., FIELD-EFFECT TRANSISTOR SELF ELECTROOPTIC EFFECT DEVICE (FET-SEED) DIFFERENTIAL TRANSIMPEDANCE AMPLIFIERS FOR 2-DIMENSIONAL OPTICAL-DATA LINKS, Journal of lightwave technology, 13(4), 1995, pp. 606-614
RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS
Authors: KRISHNAMOORTHY AV WOODWARD TK NOVOTNY RA GOOSSEN KW WALKER JA LENTINE AL DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D DAHRINGER D CHIROVSKY LMF APLIN GF ROZIER RG KIAMILEV FE MILLER DAB
Citation: Av. Krishnamoorthy et al., RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS, Electronics Letters, 31(22), 1995, pp. 1917-1918
4X4 ARRAYS OF FET-SEED EMBEDDED CONTROL 2X1 OPTOELECTRONIC SWITCHING NODES WITH ELECTRICAL FAN-OUT
Authors: LENTINE AL NOVOTNY RA CLOONAN TJ CHIROVSKY LMF DASARO LA LIVESCU G HUI S FOCHT MW FREUND JM GUTH GD LEIBENGUTH RE GLOGOVSKY KG WOODWARD TK
Citation: Al. Lentine et al., 4X4 ARRAYS OF FET-SEED EMBEDDED CONTROL 2X1 OPTOELECTRONIC SWITCHING NODES WITH ELECTRICAL FAN-OUT, IEEE photonics technology letters, 6(9), 1994, pp. 1126-1129
FIELD-EFFECT-TRANSISTOR SELF-ELECTRO-OPTIC-EFFECT-DEVICE (FET-SEED) ELECTRICALLY ADDRESSED DIFFERENTIAL MODULATOR ARRAY
Authors: LENTINE AL CHIROVSKY LMF DASARO LA LASKOWSKI EJ PEI SS FOCHT MW FREUND JM GUTH GD LEIBENGUTH RE SMITH LE WOODWARD TK
Citation: Al. Lentine et al., FIELD-EFFECT-TRANSISTOR SELF-ELECTRO-OPTIC-EFFECT-DEVICE (FET-SEED) ELECTRICALLY ADDRESSED DIFFERENTIAL MODULATOR ARRAY, Applied optics, 33(14), 1994, pp. 2849-2855
Risultati: 1-14 |