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Authors: SOCHINSKII NV MUNOZ V BERNARDI S ESPESO JI ALVES E DASILVA MF SOARES JC MARIN C DIEGUEZ E
Citation: Nv. Sochinskii et al., SELECTIVE-AREA VAPOR-PHASE EPITAXY AND STRUCTURAL-PROPERTIES OF HG1-XCDXTE ON SAPPHIRE, Journal of crystal growth, 179(3-4), 1997, pp. 585-591

Authors: RODRIGUEZ A RODRIGUEZ T KLING A SOARES JC DASILVA MF BALLESTEROS C
Citation: A. Rodriguez et al., STRAIN AND DEFECTS DEPTH DISTRIBUTIONS IN UNDOPED AND BORON-DOPED SI1-XGEX LAYERS GROWN BY SOLID-PHASE EPITAXY, Journal of applied physics, 82(6), 1997, pp. 2887-2895

Authors: REBOUTA L DASILVA MF SOARES JC SERRANO D DIEGUEZ E AGULLOLOPEZ F TORNERO J
Citation: L. Rebouta et al., NONAXIAL SITES FOR ER IN LINBO3, Applied physics letters, 70(9), 1997, pp. 1070-1072

Authors: SOCHINSKII NV MUNOZ V BELLANI V VINA L DIEGUEZ E ALVES E DASILVA MF SOARES JC BERNARDI S
Citation: Nv. Sochinskii et al., SUBSTRATE EFFECT ON CDTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 70(10), 1997, pp. 1314-1316

Authors: AGER FJ RESPALDIZA MA BOTELLA J SOARES JC DASILVA MF BENITEZ JJ ODRIOZOLA JA
Citation: Fj. Ager et al., RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS) CHARACTERIZATION OF OXIDE SCALE FORMED ON (AISI-304) STEEL AFTER SURFACE DEPOSITION OF LANTHANUM, Acta materialia, 44(2), 1996, pp. 675-681

Authors: HERREROS B LIFANTE G KLING A SOARES JC DASILVA MF TOWNSEND PD CHANDLER PJ OLIVARES J CABRERA JM
Citation: B. Herreros et al., RBS CHANNELLING STUDY OF ION-IMPLANTED AND PROTON-EXCHANGED LINBO3-ND3+MGO PLANAR WAVE-GUIDES/, Optical materials, 6(4), 1996, pp. 281-286

Authors: DASILVA MF MOORE DC WEISS APC AKELMAN E SIKIRICA M
Citation: Mf. Dasilva et al., ANATOMY OF THE PALMAR CUTANEOUS BRANCH OF THE MEDIAN NERVE - CLINICAL-SIGNIFICANCE, The Journal of hand surgery, 21A(4), 1996, pp. 639-643

Authors: SOCHINSKII NV SOARES JC ALVES E DASILVA MF FRANZOSI P DIEGUEZ E
Citation: Nv. Sochinskii et al., STRUCTURAL-PROPERTIES OF HG1-XMNXTE LAYERS GROWN ON CDTE SUBSTRATES BY LIQUID-PHASE EPITAXY, Semiconductor science and technology, 11(4), 1996, pp. 542-547

Authors: SOCHINSKII NV DIEGUEZ E ALVES E DASILVA MF SOARES JC BERNARDI S GARRIDO J AGULLORUEDA F
Citation: Nv. Sochinskii et al., LASER-ASSISTED RECRYSTALLIZATION TO IMPROVE THE SURFACE-MORPHOLOGY OFCDTE EPITAXIAL LAYERS, Semiconductor science and technology, 11(2), 1996, pp. 248-251

Authors: DASILVA RC SOUSA RC CONDE O DASILVA MF SOARES JC
Citation: Rc. Dasilva et al., FORMATION OF AL13CR2 INTERMETALLIC PHASE BY CR ION-IMPLANTATION, Surface & coatings technology, 83(1-3), 1996, pp. 60-64

Authors: MCHARGUE CJ JOSLIN DL WHITE CW DASILVA MF ALVES E SOARES JC
Citation: Cj. Mchargue et al., ION-BEAM MIXING OF CHROMIUM OR ZIRCONIUM FILMS WITH SAPPHIRE, Surface & coatings technology, 83(1-3), 1996, pp. 151-155

Authors: CALABUIG JLF SANCHEZ AM GARCIA CR FERRANDO JR DASILVA MF SOARES JC TOME FV
Citation: Jlf. Calabuig et al., CHARACTERIZATION OF ALPHA-SOURCES BY RUTHERFORD BACKSCATTERING SPECTROMETRY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 369(2-3), 1996, pp. 603-607

Authors: CORREIA JG MARQUES JG SOARES JC ALVES E DASILVA MF FREITAG K VIANDEN R
Citation: Jg. Correia et al., RADIATION-DAMAGE ANNEALING OF HG IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 244-247

Authors: ALVES E DASILVA MF MARQUES JG CORREIA JG SOARES JC FREITAG K
Citation: E. Alves et al., LOW-TEMPERATURE EPITAXIAL REGROWTH OF MERCURY IMPLANTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 248-251

Authors: KLING A REBOUTA L MARQUES JG CORREIA JG DASILVA MF DIEGUEZ E AGULLOLOPEZ F SOARES JC
Citation: A. Kling et al., ION-BEAM CHANNELING AND HYPERFINE INTERACTION ANALYSIS FOR THE CHARACTERIZATION OF STOICHIOMETRY AND ANTI-SITE POPULATION IN LINBO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 622-625

Authors: BARRADAS NP SOARES JC DASILVA MF PLASKETT TS FREITAS PP
Citation: Np. Barradas et al., RUTHERFORD BACKSCATTERING STUDY OF THIN OXIDE LAYERS PREPARED BY REACTIVE MAGNETRON SPUTTERING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 626-629

Authors: RODRIGUEZ T ALMENDRA A DASILVA MF SOARES JC WOLTERS H RODRIGUEZ A SANZMAUDES J
Citation: T. Rodriguez et al., RBS CHARACTERIZATION OF IRIDIUM SILICIDES FORMED BY RTA IN VACUUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 279-283

Authors: KLING A MARQUES JG CORREIA JG DASILVA MF DIEGUEZ E AGULLOLOPEZ E SOARES JC
Citation: A. Kling et al., STUDY OF STRUCTURAL DIFFERENCES BETWEEN STOICHIOMETRIC AND CONGRUENT LITHIUM-NIOBATE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 293-295

Authors: MARTIN JE RESPALDIZA MA GARCIATENORIO R BOLIVAR JP GOMEZCAMACHO J DASILVA MF
Citation: Je. Martin et al., ANTHROPOGENIC CONTAMINATION OF AN ESTUARINE SYSTEM EVALUATED BY PIXE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 109, 1996, pp. 506-510

Authors: LASSALETTA G GONZALEZELIPE AR JUSTO A FERNANDEZ A AGER FJ RESPALDIZA MA SOARES JC DASILVA MF
Citation: G. Lassaletta et al., THERMAL AND PHOTOCHEMICAL METHODS FOR THE PREPARATION OF THIN-FILMS OF CERMET MATERIALS, Journal of Materials Science, 31(9), 1996, pp. 2325-2332

Authors: SOCHINSKII NV SOARES JC ALVES E DASILVA MF FRANZOSI P BERNARDI S DIEGUEZ E
Citation: Nv. Sochinskii et al., STRUCTURAL-PROPERTIES OF CDTE AND HG1-XCDXTE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES, Journal of crystal growth, 161(1-4), 1996, pp. 195-200

Authors: ALFONSO JE MARTIN MJ MENDIOLA J RUIZ A ZALDO C DASILVA MF SOARES JC
Citation: Je. Alfonso et al., BI-12(GAXBI1-X)O-19.5 OPTICAL WAVE-GUIDES GROWN BY PULSED-LASER DEPOSITION, Journal of applied physics, 79(11), 1996, pp. 8210-8215

Authors: SEMA R BLASCO A MISSANA T SOLIS J AFONSO CN RODRIGUEZ A RODRIGUEZ T DASILVA MF
Citation: R. Sema et al., ALL LASER-ASSISTED HETEROEPITAXIAL GROWTH OF SI0.8GE0.2 ON SI(100) - PULSED-LASER DEPOSITION AND LASER-INDUCED MELTING SOLIDIFICATION, Applied physics letters, 68(13), 1996, pp. 1781-1783

Authors: REBOUTA L DASILVA MF SOARES JC SANTOS MT DIEGUEZ E LOPEZ FA
Citation: L. Rebouta et al., ION-BEAM CHANNELING CHARACTERIZATION OF LINBO3 - INTERACTION BETWEEN IMPURITY SITES/, Radiation effects and defects in solids, 136(1-4), 1995, pp. 1047-1049

Authors: REBOUTA L DASILVA MF SOARES JC SANTOS MT DIEGUEZ E AGULLOLOPEZ F
Citation: L. Rebouta et al., ION-BEAM CHANNELING CHARACTERIZATION OF LINBO3 - INTERACTION BETWEEN IMPURITY SITES, Optical materials, 4(2-3), 1995, pp. 174-178
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