Authors: MISHURNYI VA DEANDA F GORBATCHEV AY DELCASTILLO ICH NIETONAVARRO J

Citation: Va. Mishurnyi et al., A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS, Journal of electronic materials, 27(8), 1998, pp. 1003-1004

Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI SMIRNOV VM FALEEV NN

Citation: Va. Mishurnyi et al., ALGAASSB AND ALGAINASSB GROWTH FROM SB-RICH SOLUTIONS, Crystal research and technology, 33(3), 1998, pp. 457-464

Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI FALEEV NN

Citation: Va. Mishurnyi et al., INGAASSB GROWTH FROM SB-RICH SOLUTIONS, Journal of crystal growth, 180(1), 1997, pp. 34-39

Authors: GODINES JA CASTILLO R MARTINEZ J NAVARRO ME DEANDA F CANALES A GUZMAN J RIOSJARA D

Citation: Ja. Godines et al., GROWTH OF LOW-ETCH-PIT DENSITY INSB SINGLE-CRYSTALS BY THE CZOCHRALSKI METHOD, Journal of crystal growth, 178(3), 1997, pp. 422-425

Authors: BERISHEV IE DEANDA F MISHOURNYI VA OLVERA J ILYINSKAYA ND VASILYEV VI

Citation: Ie. Berishev et al., H2O2-HF-C4O6H6 (TARTARIC ACID)H2O ETCHING SYSTEM FOR CHEMICAL POLISHING OF GASB, Journal of the Electrochemical Society, 142(10), 1995, pp. 189-191

Authors: GODINES JA DEANDA F CANALES A BANOS L RIOSJARA D

Citation: Ja. Godines et al., A CHEMICAL ETCHING SOLUTION FOR THE DETERMINATION OF THE CRYSTALLOGRAPHIC ORIENTATION OF GASB BY OPTICAL REFLECTOGRAMS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2220-2222