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Results:
1-8
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Results: 8
Authors:
DECLERCK G
Citation: G. Declerck, CONFERENCE REVIEW - FORUM DEBATES NEXT-GENERATION LITHOGRAPHY, Laser focus, 34(5), 1998, pp. 37
Authors:
JANKNEGT R
VANDERKUY A
DECLERCK G
IDZIKOWSKI C
Citation: R. Janknegt et al., HYPNOTICS - DRUG SELECTION BY MEANS OF THE SYSTEM OF OBJECTIFIED JUDGMENT ANALYSIS (SOJA) METHOD, PharmacoEconomics, 10(2), 1996, pp. 152-163
Authors:
HEYNS M
DECLERCK G
Citation: M. Heyns et G. Declerck, VIEWPOINT - HOW CLEAN IS CLEAN ENOUGH, IEEE spectrum, 33(1), 1996, pp. 52-53
Authors:
GUTIERREZ EA
DEFERM L
DECLERCK G
Citation: Ea. Gutierrez et al., SERIES RESISTANCE EFFECTS IN SUBMICRON MOS-TRANSISTORS OPERATED FROM 300-K DOWN TO 4.2-K, Journal de physique. IV, 4(C6), 1994, pp. 31-36
Authors:
DEKEERSMAECKER R
DECLERCK G
FELIX P
HAOND M
HILL C
JANSSEN G
LORENZ J
MAES H
MONTREE A
NEPPL F
PATRUNO P
RUDAN M
RYSSEL H
VANDENHOVE L
VANDERVORST W
VANOMMEN A
Citation: R. Dekeersmaecker et al., THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2852-2859
Authors:
DECLERCK G
Citation: G. Declerck, IMEC PLANS ULTRA-CLEANROOM MANUFACTURING DEVELOPMENT EFFORT, Solid state technology, 37(8), 1994, pp. 42
Authors:
DIERICKX B
SIMOEN E
DECLERCK G
Citation: B. Dierickx et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .1. THEORY, Semiconductor science and technology, 6(9), 1991, pp. 896-904
Authors:
SIMOEN E
DIERICKX B
CLAEYS C
DECLERCK G
Citation: E. Simoen et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR, Semiconductor science and technology, 6(9), 1991, pp. 905-911
Risultati:
1-8
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