Authors:
GOODMAN SA
AURET FD
DEENAPANRAY PNK
MYBURG G
Citation: Sa. Goodman et al., ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS, JPN J A P 2, 37(1AB), 1998, pp. 10-12
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Authors:
DEENAPANRAY PNK
RIDGWAY MC
AURET FD
FRIEDLAND E
Citation: Pnk. Deenapanray et al., A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1322-1326
Authors:
DEENAPANRAY PNK
AURET FD
MYBURG G
HILLIE KT
DEMANET CM
Citation: Pnk. Deenapanray et al., ATOMIC-FORCE MICROSCOPY STUDY OF SI(111) SURFACE-MORPHOLOGY AND ELECTRICAL CHARACTERISTICS OF PD N-SI SCHOTTKY DIODES - EFFECT OF CLEANING PROCEDURES/, Surface and interface analysis, 26(10), 1998, pp. 748-757
Authors:
DEENAPANRAY PNK
AURET FD
RIDGWAY MC
GOODMAN SA
MYBURG G
MALHERBE JB
Citation: Pnk. Deenapanray et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI, Journal of applied physics, 84(5), 1998, pp. 2565-2570
Authors:
DEENAPANRAY PNK
PERRET NE
BRINK DJ
AURET FD
MALHERBE JB
Citation: Pnk. Deenapanray et al., CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON, Journal of applied physics, 83(8), 1998, pp. 4075-4080
Authors:
AURET FD
DEENAPANRAY PNK
GOODMAN SA
MEYER WE
MYBURG G
Citation: Fd. Auret et al., A DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INDUCED IN EPITAXIALLY GROWN N-SI BY LOW-ENERGY HE-ION BOMBARDMENT, Journal of applied physics, 83(10), 1998, pp. 5576-5578
Authors:
AURET FD
HAYES M
DEENAPANRAY PNK
RIDGWAY M
Citation: Fd. Auret et al., ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN GAAS BY ALPHA-PARTICLE BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 112-114
Authors:
AURET FD
DEENAPANRAY PNK
GOODMAN SA
MALHERBE JB
MEYER WE
MYBURG G
HAYES M
Citation: Fd. Auret et al., ELECTRONIC-PROPERTIES OF DEFECTS CREATED IN EPITAXIALLY GROWN N-SI BYLOW-ENERGY HE AND AR IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 393-396
Authors:
AURET FD
MYBURG G
MEYER WE
DEENAPANRAY PNK
NORDHOFF H
GOODMAN SA
MURTAGH M
YE SR
CREAN GM
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF DEFECTS IN SICL4 PLASMA-ETCHED N-GAAS AND PD SCHOTTKY DIODES FABRICATED ON IT, Applied physics letters, 71(5), 1997, pp. 668-670