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Results: 1-11 |
Results: 11
ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS
Authors: GOODMAN SA AURET FD DEENAPANRAY PNK MYBURG G
Citation: Sa. Goodman et al., ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS, JPN J A P 2, 37(1AB), 1998, pp. 10-12
ELECTRICAL CHARACTERIZATION AND ANNEALING BEHAVIOR OF DEFECT INTRODUCED IN SI DURING SPUTTER ETCHING IN AN AR PLASMA
Authors: DEENAPANRAY PNK AURET FD MYBURG G
Citation: Pnk. Deenapanray et al., ELECTRICAL CHARACTERIZATION AND ANNEALING BEHAVIOR OF DEFECT INTRODUCED IN SI DURING SPUTTER ETCHING IN AN AR PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1873-1880
A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES
Authors: DEENAPANRAY PNK RIDGWAY MC AURET FD FRIEDLAND E
Citation: Pnk. Deenapanray et al., A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1322-1326
ATOMIC-FORCE MICROSCOPY STUDY OF SI(111) SURFACE-MORPHOLOGY AND ELECTRICAL CHARACTERISTICS OF PD N-SI SCHOTTKY DIODES - EFFECT OF CLEANING PROCEDURES/
Authors: DEENAPANRAY PNK AURET FD MYBURG G HILLIE KT DEMANET CM
Citation: Pnk. Deenapanray et al., ATOMIC-FORCE MICROSCOPY STUDY OF SI(111) SURFACE-MORPHOLOGY AND ELECTRICAL CHARACTERISTICS OF PD N-SI SCHOTTKY DIODES - EFFECT OF CLEANING PROCEDURES/, Surface and interface analysis, 26(10), 1998, pp. 748-757
DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI
Authors: DEENAPANRAY PNK AURET FD RIDGWAY MC GOODMAN SA MYBURG G MALHERBE JB
Citation: Pnk. Deenapanray et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI, Journal of applied physics, 84(5), 1998, pp. 2565-2570
ELECTRICAL CHARACTERIZATION OF HE-PLASMA PROCESSED N-GAAS
Authors: AURET FD MEYER WE DEENAPANRAY PNK GOODMAN SA MYBURG G MURTAGH M YE SR CREAN GM
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF HE-PLASMA PROCESSED N-GAAS, Journal of applied physics, 84(4), 1998, pp. 1973-1976
CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON
Authors: DEENAPANRAY PNK PERRET NE BRINK DJ AURET FD MALHERBE JB
Citation: Pnk. Deenapanray et al., CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON, Journal of applied physics, 83(8), 1998, pp. 4075-4080
A DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INDUCED IN EPITAXIALLY GROWN N-SI BY LOW-ENERGY HE-ION BOMBARDMENT
Authors: AURET FD DEENAPANRAY PNK GOODMAN SA MEYER WE MYBURG G
Citation: Fd. Auret et al., A DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INDUCED IN EPITAXIALLY GROWN N-SI BY LOW-ENERGY HE-ION BOMBARDMENT, Journal of applied physics, 83(10), 1998, pp. 5576-5578
ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN GAAS BY ALPHA-PARTICLE BOMBARDMENT
Authors: AURET FD HAYES M DEENAPANRAY PNK RIDGWAY M
Citation: Fd. Auret et al., ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN GAAS BY ALPHA-PARTICLE BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 112-114
ELECTRONIC-PROPERTIES OF DEFECTS CREATED IN EPITAXIALLY GROWN N-SI BYLOW-ENERGY HE AND AR IONS
Authors: AURET FD DEENAPANRAY PNK GOODMAN SA MALHERBE JB MEYER WE MYBURG G HAYES M
Citation: Fd. Auret et al., ELECTRONIC-PROPERTIES OF DEFECTS CREATED IN EPITAXIALLY GROWN N-SI BYLOW-ENERGY HE AND AR IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 393-396
ELECTRICAL CHARACTERIZATION OF DEFECTS IN SICL4 PLASMA-ETCHED N-GAAS AND PD SCHOTTKY DIODES FABRICATED ON IT
Authors: AURET FD MYBURG G MEYER WE DEENAPANRAY PNK NORDHOFF H GOODMAN SA MURTAGH M YE SR CREAN GM
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF DEFECTS IN SICL4 PLASMA-ETCHED N-GAAS AND PD SCHOTTKY DIODES FABRICATED ON IT, Applied physics letters, 71(5), 1997, pp. 668-670
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